71V3559S80PFG

Memory IC Overview

The 71V3559S80PFG is a 4.5Mb (256K x 18) synchronous single-data-rate static random-access memory IC manufactured by Renesas Electronics Corporation. It features a parallel interface with an access time of 8 ns and operates within a supply voltage range of 3.135V to 3.465V. The device is housed in a 100-pin TQFP package, suitable for surface-mount installation, and supports industrial temperature ranges.

Memory IC Feature Summary

• Supports high-speed synchronous data transfer via a parallel interface architecture.
• Provides fast access times for efficient system performance in real-time applications.
• Operates on a standard 3.3V power supply with defined voltage tolerances.

Memory IC Applications

• High-performance embedded systems requiring fast data buffering
• Industrial equipment control units
• Network communication hardware

Memory IC Procurement Notes

Verify component authenticity through authorized distributors due to potential obsolescence status. Confirm package integrity and moisture sensitivity handling procedures prior to assembly. Cross-reference datasheet revisions to ensure compatibility with current design specifications and regulatory requirements.

Memory IC Selection Notes

Select this model for designs requiring 256K x 18 organization with synchronous timing. Ensure the PCB layout accommodates the 100-pin TQFP footprint. Verify that the system clock frequency aligns with the 8 ns access time specification for optimal signal integrity.

Memory IC Part Context

This component belongs to the 71V3559 series of synchronous SRAMs, designed for high-density memory applications. It shares architectural similarities with other members of the family but differs in pin count and package type, specifically utilizing the TQFP form factor for compact integration.

Memory IC Replacement Considerations

Check for direct pin-compatible substitutes within the same series. Verify if alternative packages like BGA variants offer functional equivalence while meeting thermal and spatial constraints.