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8ETH06-1 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE STANDARD 600V 8A TO2623. Review the specifications below when checking this part for your BOM.
The Vishay 8ETH06-1 is a hyperfast recovery rectifier utilizing FRED Pt technology, housed in a TO-262 (I2PAK) through-hole package. It features an average forward current of 8 A and a maximum repetitive reverse voltage of 600 V. The device exhibits a typical reverse recovery time of 18 ns and a peak reverse recovery current of 2.4 A at 25 °C. Forward voltage drop is typically 2.0 V at 8 A, rising to 2.4 V maximum. Reverse leakage current is limited to 50 µA at rated voltage and 25 °C. Thermal resistance from junction to case is 1.42 °C/W, supporting operation up to 175 °C.
Verify component authenticity against the official datasheet Document Number 93934. Confirm the TO-262 package marking matches the specified device code. Check for lead-free status if required by assembly specifications, noting that standard production may vary. Ensure thermal management design accounts for the 1.42 °C/W junction-to-case resistance to maintain junction temperature within the -65 °C to 175 °C operating range during high-current operation.
Select this component for designs requiring fast switching speeds and low reverse recovery charge to enhance efficiency in high-frequency power conversion. The 8 A current rating and 600 V blocking capability suit medium-power industrial applications. Consider the TO-262 package for through-hole mounting requirements where robust mechanical connection is necessary. Evaluate thermal performance under worst-case duty cycles to ensure junction temperatures remain below the 175 °C limit.
This part belongs to the 8ETH06 series of FRED Pt hyperfast rectifiers from Vishay High Power Products. The series includes variants such as the 8ETH06S in a D2PAK surface-mount package. These devices are engineered for optimized forward voltage drop and hyperfast recovery times, targeting high-efficiency power electronics. The 8ETH06-1 specifically denotes the TO-262 through-hole configuration within this product family.
Publicly confirmed substitute part numbers include BYV29G-600,127 from WeEn Semiconductors and STTH8R06D from STMicroelectronics. Verify electrical parameters and package compatibility before substitution.
The typical reverse recovery time (trr) is 18 ns when tested at IF = 1 A, dIF/dt = 100 A/µs, and VR = 30 V.
The maximum operating junction and storage temperature range is -65 °C to 175 °C.
Platinum-doped lifetime control guarantees best overall performance, ruggedness, and reliability characteristics while enabling hyperfast recovery.
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