APT1001R6BFLLG

$22.96

Description：MOSFET N-CH 1000V 8A TO247
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube

SKU:273fa28b8bcf Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT1001R6BFLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 8A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT1001R6BFLLG

Description：MOSFET N-CH 1000V 8A TO247
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 4A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1320 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：266W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247 [B]
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT1001R6BFLLG

APT1001R6BFLLG

Single FETs, MOSFETs Overview

The APT1001R6BFLLG is a Power MOS 7® N-Channel enhancement mode power MOSFET manufactured by Microchip Technology. It features a TO-247 package with a Drain-Source Voltage (V_DSS) of 1000 V and a Continuous Drain Current (I_D) of 8 A at 25°C case temperature. The device exhibits a maximum Drain-Source On-State Resistance (R_DS(on)) of 1.6 Ω at V_GS = 10 V and I_D = 4 A. Total Gate Charge (Q_g) is typically 55 nC at V_GS = 10 V. It includes a fast recovery body diode with a Reverse Recovery Time (t_rr) of 250 ns at T_j = 25°C.

Single FETs, MOSFETs Feature Summary

Power MOS 7® technology combines low conduction and switching losses with exceptionally fast switching speeds.
Patented metal gate structure significantly lowers R_DS(on) and total gate charge (Q_g).
Features a FAST RECOVERY BODY DIODE for improved performance in inductive switching applications.

Single FETs, MOSFETs Applications

High voltage power conversion systems
Inductive load switching circuits
Resistive switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the package type, as datasheets indicate availability in both TO-247 and D3PAK configurations. Ensure component authenticity through authorized Microchip Technology distributors. Confirm that the requested part matches the exact electrical ratings required for your high-voltage application design.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation up to 1000 V. Consider the thermal impedance characteristics when designing heat sinks, noting the junction-to-case thermal resistance. Evaluate the gate drive requirements against the typical gate charge specifications to ensure efficient switching performance within the desired operating frequency range.

Single FETs, MOSFETs Part Context

This device belongs to the Power MOS 7® family of high-voltage N-Channel enhancement mode power MOSFETs. The series is engineered to address both conduction and switching losses simultaneously. The product line utilizes advanced semiconductor processes to deliver superior dynamic performance compared to standard silicon power MOSFETs.