APT34F100B2

$18.18

Description：MOSFET N-CH 1000V 35A T-MAX
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube

SKU:3246e2f72391 Category: Single FETs, MOSFETs Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

APT34F100B2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 35A T-MAX. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT34F100B2

Description：MOSFET N-CH 1000V 35A T-MAX
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：380mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：305 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：9835 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1135W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：T-MAX™ [B2]
Package / Case：TO-247-3 Variant

Single FETs, MOSFETs datasheet and documents for APT34F100B2

APT34F100B2

Single FETs, MOSFETs Overview

The APT34F100B2 is a single N-channel FREDFET MOS transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-247 MAX (T-MAX) through-hole package. Key electrical parameters include a drain-source breakdown voltage of 1000 V, a continuous drain current of 35 A at case temperature, and a maximum power dissipation of 1135 W at case temperature. The device features a gate-source voltage range of ±30 V, a threshold voltage of 5 V, and a gate charge of 165 nC. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

High-voltage N-channel FREDFET design for efficient switching
T-MAX package construction for enhanced thermal performance
Through-hole mounting configuration for robust mechanical stability

Single FETs, MOSFETs Applications

Industrial motor drives
Power supply circuits
Inverter systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version from Microchip Technology or authorized distributors to confirm exact electrical characteristics and mechanical dimensions. Ensure the procurement channel provides original manufacturer packaging to guarantee component authenticity and traceability before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability and significant current handling in a through-hole format. Consider the thermal resistance of the TO-247 MAX package and ensure adequate heatsinking to maintain junction temperatures within the specified operating range during continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip Technology APT series of fast recovery epitaxial diode MOSFETs. These devices are engineered for high-efficiency power conversion applications, combining low on-resistance with fast switching speeds to minimize power losses in demanding electronic environments.