APT84M50B2

Single FETs, MOSFETs Overview

The APT84M50B2 is a single N-channel Power MOSFET manufactured by Microchip Technology, utilizing silicon technology and housed in a TO-247 MAX (T-MAX-3) through-hole package. It features a drain-source breakdown voltage of 500 V and a continuous drain current rating of 84 A. The device exhibits a maximum on-resistance of 65 mΩ at 10 V gate drive. Key electrical characteristics include a gate charge of 340 nC, threshold voltage of 3 V, and power dissipation capability of 1.135 kW. Operating temperatures range from -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• High-voltage N-channel enhancement mode operation for robust switching applications
• Low on-resistance design optimized for high-current conduction efficiency
• Through-hole mounting configuration suitable for high-power thermal management

Single FETs, MOSFETs Applications

• Industrial motor control systems
• Power supply inverters
• High-frequency switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors to ensure component authenticity and compliance with current RoHS standards. Confirm that the T-MAX-3 package dimensions match your PCB footprint requirements before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring 500 V blocking capability and high continuous current handling. Ensure the gate driver can supply sufficient charge to manage the 340 nC gate charge efficiently. Verify that the thermal design accommodates the specified power dissipation limits under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of power MOSFETs from Microchip Technology, formerly known as Advanced Power Technology. The series is characterized by high reliability and performance in industrial power electronics applications, leveraging advanced silicon planar trench technology for improved switching speeds and lower losses.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives within the same voltage and current class. Verify pinout compatibility and thermal resistance specifications before replacing existing designs.