APTM100UM65SCAVG

Single FETs, MOSFETs Overview

The APTM100UM65SCAVG is a single N-channel MOSFET module from Microchip Technology, utilizing Silicon Carbide (SiC) technology. It features a 1 kV drain-source voltage and an 110 A continuous drain current. The device is housed in an SP6 chassis mount package with a maximum power dissipation of 3250 W at case temperature. Key electrical characteristics include a gate-source voltage range of ±30 V and a typical turn-on delay time of 18 ns.

Single FETs, MOSFETs Feature Summary

• Integrates a SiC MOSFET with a complementary SiC diode for high-efficiency switching applications.
• Designed for robust thermal management with a chassis mount configuration supporting up to 3250 W power dissipation.
• Optimized for fast switching speeds with low turn-on and turn-off delay times.

Single FETs, MOSFETs Applications

• High-frequency power conversion systems
• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Renewable energy inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'CAVG' against the official Microchip datasheet to confirm the exact pinout and internal configuration, as suffixes often denote specific packaging or testing variations. Ensure compatibility with SP6 mounting hardware and verify that the 110 A current rating aligns with your thermal design constraints under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a single-switch solution combining a MOSFET and a freewheeling diode is required. The SiC technology offers superior performance over silicon in high-temperature and high-frequency environments. Compare the 110 A current rating and 1 kV voltage rating against system requirements to ensure adequate headroom for transient loads and voltage spikes.

Single FETs, MOSFETs Part Context

This module belongs to the APTM series of discrete and power modules from Microchip Technology. It is part of a family of single FET modules designed for high-power applications. The SP6 package is a standard form factor for chassis-mounted power devices, facilitating integration into larger power electronics assemblies.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the SP6 package, 1 kV rating, and SiC technology. Verify equivalent current ratings and thermal resistance values. Cross-reference with other Microchip APTM models or compatible third-party SiC modules ensuring identical pinout and mechanical dimensions.

Single FETs, MOSFETs FAQ

What semiconductor material is used in the APTM100UM65SCAVG?

The device utilizes Silicon Carbide (SiC) technology for both the MOSFET and the integrated diode.

What is the maximum power dissipation rating?

The maximum power dissipation is rated at 3250 W at case temperature (Tc).