AS2312

$0.20

Description：N-CHANNEL ENHANCEMENT MODE MOSFE
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:790545eb8748 Category: Single FETs, MOSFETs Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

AS2312 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is N-CHANNEL ENHANCEMENT MODE MOSFE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AS2312

Description：N-CHANNEL ENHANCEMENT MODE MOSFE
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：18mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.05 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：888 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for AS2312

AS2312

Single FETs, MOSFETs Overview

The AS2312 is an N-Channel Enhancement Mode MOSFET manufactured by Anbon Semiconductor. It utilizes Trench Power LV MOSFET technology to deliver high power and current handling capabilities suitable for PWM applications. The device features a maximum drain-source voltage of 20 V and a continuous drain current of 6.8 A. Its on-resistance is specified at 18 mΩ at 4.5 V gate drive, ensuring efficient switching performance in portable load switch designs.

Single FETs, MOSFETs Feature Summary

Utilizes Trench Power LV MOSFET technology for enhanced efficiency
Provides high power and current handling capability
Optimized for PWM application performance

Single FETs, MOSFETs Applications

Load Switch for Portable Devices

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (G) and date against your design requirements. Confirm that the SOT-23 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the 1.2 W power dissipation rating under expected operating conditions. Cross-reference electrical parameters with the latest manufacturer documentation before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required for portable electronics. The 20 V rating provides adequate headroom for standard logic-level circuits. Consider the 18 mΩ on-resistance for minimizing conduction losses in battery-powered systems requiring efficient power management.

Single FETs, MOSFETs Part Context

This part belongs to the family of N-Channel Enhancement Mode MOSFETs produced by Anbon Semiconductor. These devices are designed using advanced trench technology to support automotive and industrial markets. The AS2312 specifically targets applications demanding compact packaging and robust current handling within a small form factor.