Memory IC AS4C8M32S-6BIN product image

AS4C8M32S-6BIN

  • Description:IC DRAM 256MBIT PAR 90TFBGA
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tray

SKU:ffd0a8bb04ab Category: Brand:

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AS4C8M32S-6BIN is listed in the Memory IC range at ChipApex. The manufacturer field lists Alliance Memory, Inc.. Its product description is IC DRAM 256MBIT PAR 90TFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for AS4C8M32S-6BIN

  • Description:IC DRAM 256MBIT PAR 90TFBGA
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM
  • Memory Size:256Mbit
  • Memory Organization:8M x 32
  • Memory Interface:Parallel
  • Clock Frequency:166 MHz
  • Write Cycle Time - Word, Page:2ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:90-TFBGA
  • Supplier Device Package:90-TFBGA (8x13)
  • Access Time:5 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for AS4C8M32S-6BIN

AS4C8M32S-6BIN

Memory IC Overview

The AS4C8M32S-6BIN is a mobile SDRAM component manufactured by Alliance Memory, Inc. It features a storage capacity of 256 Mbit organized as 8 Megwords by 32 bits. The device supports a maximum clock frequency of 166 MHz with an access time of 5.5 ns. It operates within a voltage range of 1.7 V to 1.95 V and functions in temperatures from -40°C to +85°C. The component is housed in a 90-ball FBGA package measuring 8 x 13 mm.

Memory IC Feature Summary

  • Fully synchronous dynamic random access memory architecture designed for mobile applications
  • Industrial temperature rating ensuring reliable operation in extreme environmental conditions
  • Low power consumption characteristics suitable for battery-powered portable devices

Memory IC Applications

  • Mobile phones and smartphones
  • Personal digital assistants (PDAs)
  • Portable media players
  • Handheld gaming consoles

Memory IC Procurement Notes

Verify the specific suffix BIN against official datasheets to confirm package dimensions and thermal specifications. Ensure compatibility with system voltage requirements ranging from 1.7 V to 1.95 V. Confirm industrial temperature grade alignment with target deployment environments. Validate pinout configurations against PCB layout designs prior to integration.

Memory IC Selection Notes

Select this component when designing systems requiring high-density mobile memory with industrial reliability standards. Consider the 90-ball FBGA footprint for space-constrained layouts. Evaluate power management strategies to maintain operation within the specified 1.7 V to 1.95 V range. Assess thermal dissipation capabilities given the industrial temperature operating limits.

Memory IC Part Context

This part belongs to the Alliance Memory AS4C series of mobile SDRAMs. It represents a generation of synchronous DRAM optimized for portable electronics. The series emphasizes low power usage and compact packaging solutions. It serves as a foundational memory solution for early-generation mobile communication devices.

Memory IC Replacement Considerations

Check for direct pin-compatible upgrades within the same manufacturer's portfolio. Verify if newer generations support identical voltage levels and timing parameters. Ensure physical package dimensions match existing board space constraints during substitution planning.

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