ATP301-TL-H

Single FETs, MOSFETs Overview

The onsemi ATP301-TL-H is a P-channel enhancement mode power MOSFET designed for surface-mount applications. It utilizes the ATPAK-3 package to provide robust thermal performance and low inductance. The device features a maximum drain-source voltage of 60 V and a continuous drain current of 70 A. Key electrical parameters include a maximum on-resistance of 18 mΩ, a gate threshold voltage up to 2.6 V, and a typical gate charge of 115 nC at 10 V. It supports a maximum power dissipation of 70 W and operates within a temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• P-channel enhancement mode construction for high-side switching applications
• ATPAK-3 surface-mount package optimized for thermal efficiency and low profile
• Low on-resistance design to minimize conduction losses
• High current capability suitable for demanding power management circuits

Single FETs, MOSFETs Applications

• DC-DC converter output stages
• Load switch implementations
• Power distribution units
• Battery protection circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeits. Confirm specific ordering suffixes match exact datasheet requirements. Check for end-of-life status or obsolescence notices prior to finalizing procurement decisions. Ensure storage conditions comply with moisture sensitivity level specifications during handling.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and low on-resistance are critical for P-channel applications. Evaluate thermal resistance characteristics against system heat dissipation capabilities. Compare gate charge values against driver capabilities to ensure efficient switching speeds. Verify voltage ratings exceed peak circuit transients for reliable operation.

Single FETs, MOSFETs Part Context

This part belongs to the ATPAK series of power MOSFETs from onsemi. The series focuses on providing high-performance solutions in compact packages. These devices are engineered for modern power electronics requiring efficient thermal management and high reliability in space-constrained designs.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully. Ensure replacement parts meet identical package dimensions and thermal requirements.