AUIRF3007

Single FETs, MOSFETs Overview

The AUIRF3007 is an automotive-grade N-channel HEXFET power MOSFET in a TO-220AB package. It features a drain-source breakdown voltage of 75 V and a maximum on-resistance of 12.6 mΩ at 10 V gate drive. The device supports continuous drain currents up to 80 A (silicon limited) or 75 A (package limited). Key dynamic parameters include a total gate charge of 89 nC and a single pulse avalanche energy rating of 946 mJ. Thermal resistance from junction to case is 0.74 K/W, with an operating temperature range spanning -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for reliability
• Optimized thermal performance with low junction-to-case resistance
• Robust avalanche capability supporting unclamped inductive switching
• Enhanced gate robustness against transient voltage events

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control circuits
• DC-DC converter stages
• High-side and low-side switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tube packaging configuration. Confirm that the component meets the necessary AEC-Q101 qualification levels for your target automotive application. Ensure that the TO-220AB package dimensions align with your board layout constraints before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 75 V rating is sufficient for the system voltage. Evaluate the 12.6 mΩ maximum on-resistance against conduction loss requirements. Consider the 80 A current limit relative to peak load demands. Verify that the TO-220AB through-hole mounting method fits the assembly process.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family, designed specifically for demanding automotive environments. It utilizes silicon technology optimized for high current handling and thermal stability. The component integrates advanced gate structures to minimize switching losses while maintaining high reliability under harsh operating conditions typical of vehicle electronics.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering similar 75 V ratings and comparable on-resistance values. Ensure replacement components maintain equivalent avalanche energy ratings and thermal resistance characteristics. Verify that any substitute also holds valid automotive qualification certifications.