AUIRF3805L-7P

Description：MOSFET N-CH 55V 160A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:4936df96d1fd Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRF3805L-7P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 160A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF3805L-7P

Description：MOSFET N-CH 55V 160A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 140A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：200 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7820 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-262
Package / Case：TO-262-7

Single FETs, MOSFETs datasheet and documents for AUIRF3805L-7P

AUIRF3805L-7P

Single FETs, MOSFETs Overview

The AUIRF3805L-7P is an N-channel HEXFET power MOSFET in a TO-263CA-7 pin (D2PAK) package. It features a maximum drain-source voltage of 55 V and a continuous drain current of 240 A at 25°C case temperature. The device exhibits a typical on-resistance of 2.0 mΩ, with a maximum rating of 2.6 mΩ at 10 V gate drive. It supports a maximum power dissipation of 300 W and operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Automotive qualified according to AEC-Q101 standards
Advanced process technology for ultra-low on-resistance
Fast switching speed capabilities
Repetitive avalanche operation allowed up to Tjmax

Single FETs, MOSFETs Applications

Automotive applications
Wide variety of other applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' corresponds to the long lead variant when sourcing. Confirm that the component meets the required automotive qualification standards. Ensure thermal management designs account for the specified junction-to-case resistance values. Check for RoHS compliance status as indicated in the documentation.

Single FETs, MOSFETs Selection Notes

Select this component for high-current automotive environments requiring robust avalanche performance. Consider the TO-263CA-7 pin package dimensions for PCB layout compatibility. Evaluate thermal requirements against the 300 W power dissipation limit. Verify gate drive voltage compatibility with the 2.0 V to 4.0 V threshold range.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET series from Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance per silicon area. The product line is designed for efficiency and reliability in demanding electrical environments.