Single FETs, MOSFETs AUIRF4905S product image

AUIRF4905S

$6.77
  • Description:MOSFET P-CH 55V 42A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:5aa9d0d04e66 Category: Brand:

  
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AUIRF4905S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 55V 42A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF4905S

  • Description:MOSFET P-CH 55V 42A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:20mOhm @ 42A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):200W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRF4905S

AUIRF4905S

Single FETs, MOSFETs Overview

The AUIRF4905S is a P-Channel HEXFET® Power MOSFET designed for automotive applications. It features advanced planar technology to achieve low on-resistance per silicon area. Key electrical parameters include a drain-to-source voltage (VDS) of -55 V, a maximum static drain-to-source on-resistance (RDS(on)) of 20 mΩ at VGS = -10 V and ID = -42 A, and continuous drain currents of -70 A (silicon limited) or -42 A (package limited). The device supports an operating junction temperature range from -55°C to +150°C and is housed in a D2PAK (TO-263AB) package.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified according to AEC-Q101 standards
  • Advanced planar technology for low on-resistance
  • Fast switching capability with repetitive avalanche allowance up to Tjmax

Single FETs, MOSFETs Applications

  • Automotive power management systems
  • Cellular design applications requiring ruggedized device performance
  • High-efficiency switching circuits utilizing fast switching speeds

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the base part number covers both TO-262 and D2PAK forms. Confirm that the orderable part number matches the desired packaging format, such as tube or tape and reel. Ensure compatibility with the intended thermal management strategy given the junction-to-case thermal resistance specifications provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with automotive qualification is required. Consider the -55 V rating and 20 mΩ RDS(on) limits for circuit design. Evaluate the package-limited current of -42 A against system requirements rather than the higher silicon-limited value. Ensure gate drive voltages remain within the ±20 V absolute maximum rating.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET® Power MOSFET family, specifically engineered for automotive environments. It utilizes cellular design techniques to optimize performance metrics like on-resistance and switching speed. The product line includes variants with different packaging options to suit various manufacturing needs while maintaining consistent electrical characteristics.

Single FETs, MOSFETs Replacement Considerations

Check for equivalent parts within the IRF4905 series or other Infineon P-Channel MOSFETs with similar -55 V ratings and D2PAK packaging. Verify that any substitute meets AEC-Q101 automotive qualification if required by the application. Compare thermal resistance and current handling capabilities to ensure adequate performance margins.

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