AUIRF7669L2TR

Single FETs, MOSFETs Overview

The AUIRF7669L2TR is an automotive-grade N-channel HEXFET power MOSFET in a DirectFET ISOMETRIC L8 package. It features a drain-source breakdown voltage of 100 V and a maximum gate-source voltage of ±20 V. The device offers a typical on-resistance of 3.5 mΩ (max 4.4 mΩ) at VGS=10V, ID=68A. Continuous drain current reaches 114 A at TC=25°C (silicon limited). Total gate charge is typically 81 nC. Operating junction temperature ranges from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Advanced DirectFET packaging enables dual-sided cooling for high thermal transfer efficiency.
• Optimized for automotive motor drive, DC-DC conversion, and heavy load applications.
• Features low parasitic parameters and exceptionally small footprint with low profile.
• Supports repetitive avalanche capability for robustness and reliability.

Single FETs, MOSFETs Applications

• Automotive motor drive systems
• High frequency DC-DC converters
• Heavy load applications on ICE platforms
• Applications on HEV and EV platforms

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TR' corresponds to the Tape and Reel standard pack quantity of 4000 units as defined in the datasheet ordering table. Confirm that the component meets the required Automotive qualification standards per AEC-Q101 before integration into safety-critical designs.

Single FETs, MOSFETs Selection Notes

Select this component when system requirements demand low on-state resistance combined with high current handling in a compact surface-mount form factor. The DirectFET L8 package is suitable for designs requiring dual-sided cooling capabilities and compatibility with standard vapor phase or convection soldering processes.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's automotive-grade HEXFET series utilizing DirectFET technology. It is designed to replace older discrete packages by offering similar footprints but with significantly improved thermal performance and lower electrical losses due to advanced silicon processing techniques.

Single FETs, MOSFETs Replacement Considerations

Direct replacements are not explicitly listed in the provided documentation. Verify pinout compatibility and thermal resistance characteristics if substituting with other DirectFET L8 variants or different manufacturer equivalents.