AUIRFR5305TRL

$1.09

Description：MOSFET P-CH 55V 31A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a233e976493d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR5305TRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 55V 31A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR5305TRL

Description：MOSFET P-CH 55V 31A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR5305TRL

AUIRFR5305TRL

Single FETs, MOSFETs Overview

The AUIRFR5305TRL is an automotive-grade P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D-Pak (TO-252AA) surface-mount package with three pins. The device supports a maximum drain-source voltage of -55 V and a continuous drain current of -31 A at 25°C case temperature. Its maximum static drain-to-source on-resistance is 0.065 Ω at a gate-source voltage of -10 V. The component operates within a junction temperature range of -55°C to +175°C, with a maximum power dissipation of 110 W.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with AEC-Q101 standards for high reliability in vehicle environments.
Advanced planar technology enables low on-resistance per silicon area for improved efficiency.
Fully avalanche rated capability allowing repetitive avalanche operation up to the maximum junction temperature.
High-speed switching performance combined with ruggedized device design.

Single FETs, MOSFETs Applications

Automotive power management systems
General-purpose power switching applications
Low-side or high-side load switching circuits

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required tape and reel packaging format. Confirm the component meets the intended automotive grade requirements through official Infineon documentation. Ensure compatibility with standard D-Pak footprint dimensions during PCB layout. Check for any recent product change notices regarding manufacturing locations or material composition updates.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-qualified P-channel MOSFET is required for robust power switching. The device offers a balance of low on-resistance and high current handling capabilities suitable for demanding thermal environments. Consider the 175°C operating temperature limit for high-heat applications. Evaluate the avalanche energy rating if the circuit involves inductive loads prone to voltage spikes.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes cellular planar design techniques to achieve superior performance metrics compared to older generation devices. The automotive variant ensures compliance with strict industry reliability standards. The D-Pak package provides efficient thermal dissipation for surface-mount assembly processes.