AUIRFU3607

Single FETs, MOSFETs Overview

The AUIRFU3607 is an automotive-grade, single N-channel HEXFET power MOSFET in the I-Pak (TO-251AA) package. It features a 75V drain-source breakdown voltage and a maximum on-resistance of 9.0mΩ at VGS=10V. The device supports a continuous drain current of 80A (silicon limited) or 56A (package limited). Key electrical parameters include a total gate charge of 56nC, a pulsed drain current of 310A, and a maximum power dissipation of 140W. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for reliability.
• Advanced process technology enabling ultra-low on-resistance per silicon area.
• Capable of repetitive avalanche operation up to the maximum junction temperature.
• Optimized body diode characteristics featuring fast switching and high dv/dt recovery.

Single FETs, MOSFETs Applications

• Automotive power switching circuits
• High-efficiency synchronous rectification in SMPS
• Uninterruptible power supply systems

Single FETs, MOSFETs Procurement Notes

Verify that the specific part number matches the required I-Pak (TO-251AA) surface-mount configuration. Confirm the presence of the automotive grade designation and AEC-Q101 compliance status during sourcing. Ensure the supplier provides documentation confirming RoHS compliance and lead-free manufacturing processes as specified in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and low conduction losses are critical. The I-Pak package suits applications requiring moderate thermal performance with space constraints. Evaluate the 56A package-limited current against system requirements if heatsinking is insufficient. Consider the 7.34mΩ typical on-resistance for efficiency optimization in low-voltage, high-current designs.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family, specifically engineered for automotive environments. It utilizes advanced processing techniques to minimize resistance while maintaining robustness. The I-Pak variant offers a compact solution compared to through-hole options like the TO-220, facilitating automated assembly in modern electronic control units.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include IRFU3607PBF and IRFU3607. Note that non-automotive variants lack AEC-Q101 certification. Verify pinout compatibility between I-Pak packages before substitution.

Single FETs, MOSFETs FAQ

Is the AUIRFU3607 qualified for automotive applications?

Yes, the datasheet explicitly states that this part number passed Automotive qualification according to AEC-Q101 standards.

What is the maximum repetitive avalanche energy allowed?

The maximum repetitive avalanche energy (EAR) is 14 mJ, provided the pulse width is ≤ 400µs and the duty cycle is ≤ 2%.

How does the package limitation affect the continuous drain current?

While the silicon limit allows 80A, the package limits the continuous drain current to 56A at TC=25°C due to bond wire current limits.