Single FETs, MOSFETs AUIRLR2905Z product image

AUIRLR2905Z

  • Description:MOSFET N-CH 55V 42A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:b9bc49543d9f Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AUIRLR2905Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLR2905Z

  • Description:MOSFET N-CH 55V 42A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:13.5mOhm @ 36A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:35 nC @ 5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:1570 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):110W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRLR2905Z

AUIRLR2905Z

Single FETs, MOSFETs Overview

The AUIRLR2905Z is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced process technology to achieve ultra-low on-resistance and fast switching capabilities. The device supports a maximum drain-source voltage of 55V and offers a continuous drain current of 60A (silicon limited) or 42A (package limited). Key electrical parameters include a maximum RDS(on) of 13.5mΩ at VGS=10V and a total gate charge of 23nC. It features a 175°C operating junction temperature, repetitive avalanche capability, and is available in the D-Pak (TO-252AA) surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified per AEC-Q101 standards for high reliability
  • Advanced process technology enabling extremely low on-resistance per silicon area
  • Supports repetitive avalanche operation up to maximum junction temperature
  • Fast switching speed combined with 175°C junction operating temperature

Single FETs, MOSFETs Applications

  • Automotive power management systems
  • Low-side switching applications
  • High-efficiency power conversion circuits

Single FETs, MOSFETs Procurement Notes

Verify that the specific order includes the 'AU' prefix to ensure automotive qualification compliance. Confirm the package variant matches the required form factor, as the base part number is available in both tube and tape-and-reel configurations. Ensure storage and handling procedures adhere to the specified Moisture Sensitivity Level 1 requirements to maintain device integrity prior to soldering.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and high thermal stability are critical. The 55V rating suits low-voltage automotive systems. Compare the 13.5mΩ RDS(on) against system conduction loss requirements. Consider the 60A silicon-limited current versus the 42A package-limited current based on the PCB thermal design and case temperature conditions to ensure safe operation within the absolute maximum ratings.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically designed for robust performance in demanding environments. The 'AU' designation indicates it meets stringent automotive qualification standards, distinguishing it from standard industrial variants. It represents a balance of low conduction losses and high thermal endurance suitable for modern vehicle electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 55V rating, N-channel configuration, and D-Pak package. Verify that any replacement also holds AEC-Q101 qualification if automotive use is intended. Check that the replacement's RDS(on) and thermal resistance values meet or exceed the original specifications to avoid derating issues.

Single FETs, MOSFETs FAQ

Is the AUIRLR2905Z qualified for automotive applications?

Yes, the AUIRLR2905Z has passed Automotive qualification per AEC-Q101 standards.

What is the maximum repetitive avalanche energy allowed?

The device allows repetitive avalanche operation up to Tjmax, with a tested single pulse avalanche energy value of 85 mJ under specific test conditions.

What is the maximum junction temperature for this MOSFET?

The maximum operating junction temperature is 175°C.

AUIRLR2905ZAUIRLR2905Z

Click on the inquiry

Recent News