AUIRLR3105

Single FETs, MOSFETs Overview

The AUIRLR3105 is an automotive-grade N-channel power MOSFET utilizing Infineon's advanced planar HEXFET technology. It features a 55V drain-source breakdown voltage and a maximum continuous drain current of 25A at 25°C case temperature. The device offers a typical on-resistance of 30mΩ (maximum 37mΩ at VGS=10V) and supports a junction temperature range from -55°C to +175°C. Packaged in D-Pak (TO-252AA), it is fully avalanche rated with a single pulse avalanche energy of 61mJ.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for high reliability
• Advanced planar technology ensures low on-resistance per silicon area
• Logic-level gate drive capability for efficient control
• Fully avalanche rated with repetitive avalanche allowance up to Tjmax

Single FETs, MOSFETs Applications

• Automotive electronic systems
• Low-side switching applications
• Power management circuits requiring ruggedized design

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your manufacturing process, such as tube or tape-and-reel packaging. Confirm that the component meets the necessary AEC-Q101 qualification levels for your target automotive application. Ensure thermal management designs account for the specified junction-to-case resistance values under board-mounted conditions.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-grade N-channel MOSFET with 55V rating and logic-level drive is required. Consider the 37mΩ maximum on-resistance for conduction loss calculations. Evaluate the 2.65°C/W junction-to-case thermal resistance for heat dissipation requirements in D-Pak packages. Verify compatibility with the intended gate drive voltage levels.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically designed for robust performance in demanding environments. The AUIRLR3105 variant integrates automotive qualification into the standard planar technology platform, providing designers with a reliable solution for high-current switching tasks where space efficiency and thermal stability are critical.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering similar 55V ratings and comparable RDS(on) values. Ensure any substitute maintains the same D-Pak footprint and pinout configuration. Verify that replacement components also meet AEC-Q101 automotive qualification if required by the system design specifications.