BBS3002-DL-1E

Description：MOSFET P-CH 60V 100A D2PAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:bd213cd2b9da Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

BBS3002-DL-1E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 60V 100A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BBS3002-DL-1E

Description：MOSFET P-CH 60V 100A D2PAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：5.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：280 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：13200 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：90W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for BBS3002-DL-1E

BBS3002-DL-1E

Single FETs, MOSFETs Overview

The BBS3002-DL-1E is a P-Channel Power MOSFET manufactured by onsemi, housed in a TO-263 surface-mount package. It features a Drain-Source Breakdown Voltage (Vds) of 60 V and supports a Continuous Drain Current (Id) of 100 A. The device exhibits a typical ON-resistance (RDS(on)) of 4.4 mΩ at 4 V gate drive and 5.8 mΩ at 10 V gate drive with 50 A current. Key electrical parameters include an input capacitance (Ciss) of 13,200 pF and a gate charge (Qg) of 280 nC. The component operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 90 W.

Single FETs, MOSFETs Feature Summary

High-current capability with 100 A continuous drain current rating for robust power handling.
Low on-resistance design optimized for efficient switching and reduced conduction losses.
Compatible with standard logic-level gate drive voltages including 4 V and 10 V operation.

Single FETs, MOSFETs Applications

DC-DC converter output stages
Motor control circuits
Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the obsolete status of this specific part number before initiating procurement processes. Confirm availability through authorized distributors or approved substitute components. Ensure that any replacement parts meet the original electrical specifications and thermal requirements. Validate package compatibility and pinout alignment during integration planning.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current density and low voltage drop in P-channel configurations. Consider the thermal performance and package limitations when designing heat dissipation strategies. Evaluate the gate charge and capacitance values for switching speed requirements in high-frequency power conversion designs.

Single FETs, MOSFETs Part Context

This component belongs to the family of P-Channel Power MOSFETs from onsemi, designed for power switching applications. It utilizes silicon gate technology to achieve fast switching speeds and rugged performance. The TO-263 package provides a balance between thermal efficiency and surface-mount convenience for industrial and consumer electronics.

Single FETs, MOSFETs Replacement Considerations

DigiKey lists substitutes for this obsolete part. Verify that alternative components match the 60 V rating, 100 A current capacity, and TO-263 package form factor. Ensure equivalent RDS(on) and thermal characteristics are maintained in the new selection.