BS107PSTOB

$0.21

Description：MOSFET N-CH 200V 120MA E-LINE
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:0bd4424d86db Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

BS107PSTOB is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 200V 120MA E-LINE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BS107PSTOB

Description：MOSFET N-CH 200V 120MA E-LINE
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.6V, 5V
Rds On (Max) @ Id, Vgs：30Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：E-Line (TO-92 compatible)
Package / Case：E-Line-3

Single FETs, MOSFETs datasheet and documents for BS107PSTOB

BS107PSTOB

Single FETs, MOSFETs Overview

The BS107PSTOB is a through-hole N-channel MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 120 mA at 25°C ambient temperature. The device has a maximum power dissipation of 500 mW at Ta and operates within a junction temperature range of -55°C to +150°C. The gate-source voltage (Vgs) rating is ±20 V. The on-resistance (Rds(on)) is specified as 30 ohms at 100 mA with a 5 V gate drive, or 28 ohms under similar conditions in related datasheets. It utilizes an E-Line (TO-92 compatible) package.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode MOSFET technology
High drain-source breakdown voltage capability
Through-hole mounting for robust mechanical connection
Wide operating temperature range suitability

Single FETs, MOSFETs Applications

General purpose switching applications
Low power signal processing circuits
Industrial control modules requiring high voltage isolation

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead-free plating requirements with the supplier prior to procurement. Ensure the E-Line package dimensions match the target PCB footprint design constraints.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel switch is required in a through-hole configuration. The 200 V rating supports applications exceeding standard low-voltage logic levels. Consider the 120 mA current limit and 500 mW thermal dissipation for load management. The TO-92 compatible form factor aids in legacy board retrofits or prototyping where surface mount options are less accessible.

Single FETs, MOSFETs Part Context

This part belongs to the small-signal MOSFET category from Diodes Incorporated. It is designed for general-purpose amplification and switching tasks. The E-Line package provides a standardized footprint compatible with common through-hole assembly processes. It serves as a discrete semiconductor solution for power management and signal control in electronic systems.