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BZD27C68P-HE3-08 is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ZENER 68V 800MW DO219AB. Review the specifications below when checking this part for your BOM.
The BZD27C68P-HE3-08 is a silicon planar Zener diode from Vishay General Semiconductor, designed for surface-mount applications in the SMF (DO-219AB) package. It features a nominal Zener voltage of 68 V with a tolerance range of 64 V to 72 V at a test current of 10 mA. The device supports a maximum power dissipation of 800 mW at 30 °C and withstands non-repetitive peak surge power up to 150 W. It operates within a temperature range of -65 °C to +175 °C, exhibits low leakage current of 1 µA maximum, and has a dynamic resistance of 80 Ω.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and AEC-Q101 qualification status prior to integration. Ensure storage conditions maintain moisture sensitivity level 1 integrity. Validate marking codes against official datasheet specifications to prevent counterfeit substitution.
Select this component when a 68 V Zener voltage is required in a compact surface-mount form factor. Consider the 800 mW power rating and thermal impedance values for heat dissipation requirements. Evaluate the 80 Ω dynamic resistance for precision regulation needs. Verify compatibility with reflow soldering profiles up to 260 °C during assembly processes.
This part belongs to the BZD27C series of Zener diodes manufactured by Vishay Semiconductors. The series offers a wide voltage range from 3.6 V to 200 V in the SMF package. The HE3 suffix indicates RoHS compliance and AEC-Q101 qualification, distinguishing it from commercial grade E3 variants. The series is designed for high reliability in demanding electronic environments.
BZD27C68P-M3-08
The maximum operating junction temperature is 175 °C.
Yes, the HE3 variant is qualified according to AEC-Q101 standards.
The maximum reverse leakage current is 1 µA at 51 V.
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