Memory IC CY62137FV30LL-55ZSXE product image

CY62137FV30LL-55ZSXE

$5.36
  • Description:IC SRAM 2MBIT PARALLEL 44TSOP II
  • Series:MOBL™
  • Mfr:Cypress Semiconductor Corp
  • Package:Bulk,Tray

SKU:f4b03049b2d7 Category: Brand:

  
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CY62137FV30LL-55ZSXE is listed in the Memory IC range at ChipApex. The manufacturer field lists Cypress Semiconductor Corp. Its product description is IC SRAM 2MBIT PARALLEL 44TSOP II. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY62137FV30LL-55ZSXE

  • Description:IC SRAM 2MBIT PARALLEL 44TSOP II
  • Series:MOBL™
  • Mfr:Cypress Semiconductor Corp
  • Package:Bulk,Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:2Mbit
  • Memory Organization:128K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:2.2V ~ 3.6V
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:44-TSOP II
  • Access Time:55 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for CY62137FV30LL-55ZSXE

CY62137FV30LL-55ZSXE

Memory IC Overview

The CY62137FV30LL-55ZSXE is a 2-Mbit (128K x 16) CMOS static RAM from the MoBL Automotive family. It operates within a voltage range of 2.2 V to 3.6 V and supports an automotive temperature grade of -40 °C to +125 °C. The device provides a maximum access time of 55 ns. Standby current specifications include a typical value of 1 µA and a maximum of 20 µA.

Memory IC Feature Summary

  • Designed for extended battery life in portable applications through ultra-low active and standby power consumption.
  • Features automatic power-down mechanisms that significantly reduce energy usage when addresses are not toggling or during deselection.
  • Supports byte-level power management via independent Byte High Enable and Byte Low Enable signals.

Memory IC Applications

  • Automotive electronic systems requiring high reliability across extreme temperature ranges
  • Portable consumer devices prioritizing low power consumption
  • Embedded memory solutions utilizing parallel interface architectures

Memory IC Procurement Notes

Verify the specific speed grade suffix '55' corresponds to the required 55 ns timing parameters. Confirm the 'E' suffix indicates compliance with the Automotive-E temperature range (-40 °C to +125 °C). Ensure the TSOP II package type matches the target PCB footprint requirements.

Memory IC Selection Notes

Select this component when designing systems that require robust performance under varying voltage conditions between 2.2 V and 3.6 V. Consider its pin compatibility with standard Cypress SRAM families if migrating existing designs. Evaluate the thermal resistance characteristics against the expected ambient operating temperatures.

Memory IC Part Context

This part belongs to the MoBL Automotive SRAM series, engineered specifically for environments demanding both high-speed data access and strict power efficiency standards. It utilizes advanced circuit design to minimize active current draw while maintaining fast read and write cycle times suitable for dynamic system operations.

Memory IC Replacement Considerations

Pin-compatible alternatives include the CY62137CV, CY62137CV25, CY62137CV30, CY62137CV33, CY62137V, and CY62137EV30 models. Verify that any substitute meets the specific voltage and temperature requirements of the application.

Memory IC FAQ

How does the device manage power consumption during idle states?

The device enters a standby mode when deselected, reducing power consumption by more than 99%. Outputs enter a high-impedance state to further minimize leakage currents.

What is the mechanism for controlling individual bytes?

Independent Byte High Enable (BHE) and Byte Low Enable (BLE) signals allow selective writing and reading of the upper or lower 8 bits of the 16-bit word.

CY62137FV30LL-55ZSXECY62137FV30LL-55ZSXE
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