CY7C1163KV18-450BZC

Memory IC Overview

The CY7C1163KV18-450BZC is an 18-Mbit QDR II+ SRAM with a 1M x 18 organization. It features separate read and write ports supporting concurrent transactions at a maximum clock frequency of 450 MHz. The device utilizes a four-word burst architecture with 2.5-cycle read latency when the DOFF pin is asserted HIGH. It operates with a core voltage of 1.8 V ± 0.1 V and supports I/O voltages from 1.4 V to VDD. The component is housed in a 165-ball FBGA package measuring 13 × 15 × 1.4 mm.

Memory IC Feature Summary

• Separate independent read and write data ports enable concurrent transactions without bus turnaround
• Four-word burst architecture reduces address bus frequency while maximizing data throughput
• Double data rate interfaces on both ports transfer data at twice the input clock frequency
• Echo clocks and valid data indicator simplify data capture in high-speed systems

Memory IC Applications

• High-bandwidth networking equipment requiring low-latency memory access
• Telecommunications infrastructure utilizing parallel interface architectures
• Industrial control systems needing synchronous pipelined SRAM solutions

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required operational frequency, as the base part number covers multiple variants. Confirm the package variant corresponds to the lead-free designation if environmental compliance is mandatory. Ensure the supply voltage requirements align with the system's power delivery network before integration.

Memory IC Selection Notes

Select this component for applications requiring independent read and write bandwidth. The 450 MHz speed grade offers a balance between performance and power consumption compared to higher-frequency variants. Consider the 1M x 18 organization for width expansion scenarios where depth expansion is managed via port selects.

Memory IC Part Context

This device belongs to the Cypress QDR II+ family of synchronous pipelined SRAMs. It shares architectural similarities with the CY7C1165KV18 but differs in data width and array organization. The QDR II+ technology extends the QDR II standard by offering improved timing margins and support for lower I/O voltages.

Memory IC Replacement Considerations

CY7C1163KV18-550BZXI provides equivalent functionality at a higher 550 MHz operating frequency.