Memory IC CY7C1265KV18-550BZXC product image

CY7C1265KV18-550BZXC

  • Description:IC SRAM 36MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:9b2ea5c65550 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

CY7C1265KV18-550BZXC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 36MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1265KV18-550BZXC

  • Description:IC SRAM 36MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II+
  • Memory Size:36Mbit
  • Memory Organization:1M x 36
  • Memory Interface:Parallel
  • Clock Frequency:550 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1265KV18-550BZXC

CY7C1265KV18-550BZXC

Memory IC Overview

The CY7C1265KV18-550BZXC is a 36-Mbit Dual Data Rate (DDR) Synchronous SRAM from Infineon Technologies. It operates at a maximum clock frequency of 550 MHz with a two-word burst architecture and 2.5-cycle read latency. The device features an organization of 2Mb x 18 and supports parallel interfaces. Operating voltage ranges from 1.7 V to 1.9 V, with a commercial temperature range of 0°C to 70°C. It utilizes a 165-FBGA package with Sn/Ag/Cu lead ball finish.

Memory IC Feature Summary

  • Supports high-speed data transfer via DDR interface at up to 550 MHz
  • Utilizes two-word burst architecture for efficient sequential access
  • Features low-latency performance with 2.5 cycle read delay

Memory IC Applications

  • High-performance computing systems
  • Network infrastructure equipment
  • Telecommunications base stations

Memory IC Procurement Notes

Verify the specific suffix BZXC against the official datasheet to confirm package type and material specifications. Ensure the operating environment remains within the 0°C to 70°C commercial temperature range. Confirm that the system power supply strictly adheres to the 1.7 V to 1.9 V operating voltage limits to prevent device malfunction or damage.

Memory IC Selection Notes

Select this component when a 36-Mbit capacity with 550 MHz speed is required. It is suitable for designs needing 18-bit data width and low latency. Consider the FBGA package constraints and thermal management requirements for the commercial grade temperature range during PCB layout.

Memory IC Part Context

This part belongs to the DDR II+ SRAM family, designed for applications requiring high bandwidth and low latency. It complements other parts in the series like the CY7C1268KV18-550BZXC, offering similar performance characteristics with specific organizational differences.

Memory IC Replacement Considerations

Check for direct pin-compatible substitutes within the same DDR II+ family. Verify if alternative speeds or densities meet the design requirements without changing the board layout.

CY7C1265KV18-550BZXCCY7C1265KV18-550BZXC

Click on the inquiry

Recent News