CY7C1318KV18-250BZI

Memory IC Overview

The CY7C1318KV18-250BZI is a synchronous static random-access memory (SRAM) device manufactured by Infineon Technologies, formerly Cypress Semiconductor. It features an 18 Mbit storage capacity organized as 1M x 18 bits. The component supports a maximum clock frequency of 250 MHz with a typical access time of 450 ps. It operates within a supply voltage range of 1.7 V to 1.9 V and draws a maximum power supply current of 380 mA. The device utilizes a parallel interface and is housed in a 165-pin FBGA package measuring 13x15 mm. It is designed for surface mount installation and functions within an operating temperature range of 0°C to +70°C.

Memory IC Feature Summary

• Supports high-speed data transfer via a 250 MHz synchronous parallel interface
• Utilizes QDR II architecture for efficient burst data handling
• Operates on a low-voltage 1.8V power supply for reduced energy consumption

Memory IC Applications

• High-performance networking equipment requiring fast packet buffering
• Telecommunications systems utilizing synchronous data processing
• Industrial control systems needing rapid volatile memory access

Memory IC Procurement Notes

Verify the manufacturer status carefully, as this specific part number is listed as obsolete or discontinued by major distributors. Confirm availability through authorized secondary market suppliers or Rochester Electronics if original stock is required. Ensure the 165-FBGA footprint matches your PCB design constraints. Check RoHS compliance status, as older revisions may not meet current environmental standards. Validate the operating temperature range against your system's thermal requirements before finalizing procurement.

Memory IC Selection Notes

Select this component when a 18 Mbit synchronous SRAM with a 1M x 18 organization is required. It is suitable for designs needing 250 MHz operation speeds and 1.8V logic levels. Consider the 165-FBGA package size for board space limitations. Compare against the CY7C1313 series for similar performance characteristics. Ensure the commercial temperature range meets application needs.

Memory IC Part Context

This device belongs to the CY7C1318KV18 family of QDR II SRAMs. It shares architectural similarities with the CY7C1313 and CY7C1315 models but differs in organization and speed grades. The KV18 suffix indicates the 1.8V I/O and core voltage specification. It is part of Infineon's broader portfolio of high-speed memory solutions for embedded applications.

Memory IC Replacement Considerations

The CY7C1313KV18-250BZC is a verified substitute within the same family offering similar QDR II functionality. Verify pin compatibility and electrical specifications before substitution.