Memory IC CY7C2263XV18-633BZXC product image

CY7C2263XV18-633BZXC

$99.02
  • Description:IC SRAM 36MBIT PAR 165FBGA
  • Series:-
  • Mfr:Cypress Semiconductor Corp
  • Package:Bulk

SKU:963f0b03796a Category: Brand:

  
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CY7C2263XV18-633BZXC is listed in the Memory IC range at ChipApex. The manufacturer field lists Cypress Semiconductor Corp. Its product description is IC SRAM 36MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C2263XV18-633BZXC

  • Description:IC SRAM 36MBIT PAR 165FBGA
  • Series:-
  • Mfr:Cypress Semiconductor Corp
  • Package:Bulk
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II+
  • Memory Size:36Mbit
  • Memory Organization:2M x 18
  • Memory Interface:Parallel
  • Clock Frequency:633 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C2263XV18-633BZXC

CY7C2263XV18-633BZXC

Memory IC Overview

The CY7C2263XV18 is a 36-Mbit QDR II+ Xtreme SRAM with a 2 M × 18 organization. It features a four-word burst architecture and operates at a maximum clock frequency of 633 MHz. The device provides 2.5 cycle read latency when DOFF is asserted HIGH, or 1 cycle latency in QDR I mode when DOFF is LOW. It utilizes separate independent read and write data ports with double data rate interfaces on both sides, transferring data at 1266 MHz. Core voltage is 1.8 V ± 0.1 V, while I/O voltage ranges from 1.4 V to 1.6 V. It includes On-Die Termination (ODT) for D, BWS, and clock inputs.

Memory IC Feature Summary

  • Separate independent read and write data ports support concurrent transactions without bus turn-arounds
  • Four-word burst architecture reduces address bus frequency requirements
  • On-Die Termination (ODT) feature supports D, BWS, and K/K inputs to eliminate external resistors
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems

Memory IC Applications

  • High-bandwidth networking equipment
  • Telecommunications infrastructure
  • Data center storage controllers

Memory IC Procurement Notes

Verify the specific speed grade suffix matches system timing requirements. Confirm package orientation and pinout compatibility during integration. Ensure power supply sequencing adheres to the QDR II+ Xtreme specifications. Validate impedance matching resistor values connected to the ZQ pin for proper output driver calibration.

Memory IC Selection Notes

Select this component for applications requiring high throughput with independent read/write paths. Consider the 2.5 cycle latency for standard operation or 1 cycle latency if DOFF is grounded. Verify that the system can accommodate the 165-ball FBGA package dimensions. Ensure the design supports the required core and I/O voltage levels for stable operation.

Memory IC Part Context

This part belongs to the Cypress/Infineon QDR II+ Xtreme SRAM family. It shares architectural similarities with the CY7C2265XV18 but differs in organization (2Mx18 vs 1Mx36). The product line emphasizes high-speed synchronous pipelined memory solutions for demanding bandwidth applications.

Memory IC Replacement Considerations

CY7C2265XV18 offers similar functionality with a 1 M × 36 organization.

CY7C2263XV18-633BZXCCY7C2263XV18-633BZXC
$99.02
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