Diode Arrays DZ3600S17K3B2NOSA1 product image

DZ3600S17K3B2NOSA1

$1,064.03
  • Description:DIODE MODULE GP 1700V AIHM190-1
  • Series:-

SKU:28db54d70478 Category: Brand:

  
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DZ3600S17K3B2NOSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MODULE GP 1700V AIHM190-1. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DZ3600S17K3B2NOSA1

  • Description:DIODE MODULE GP 1700V AIHM190-1
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Diode Configuration:3 Independent
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1700 V
  • Current - Average Rectified (Io) (per Diode):-
  • Voltage - Forward (Vf) (Max) @ If:2.2 V @ 3600 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:-
  • Operating Temperature - Junction:-40°C ~ 125°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:A-IHM190-1
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for DZ3600S17K3B2NOSA1

DZ3600S17K3B2NOSA1

Diode Arrays Overview

The DZ3600S17K3_B2 is a single-switch IGBT module featuring an integrated inverter diode. It has a maximum repetitive peak reverse voltage of 1700 V and a continuous DC forward current rating of 3600 A. The device operates within a junction temperature range of -40°C to +125°C. Key electrical parameters include a typical forward voltage of 1.80 V at 25°C and a module stray inductance of 10 nH. Thermal resistance from junction to case is 14.0 K/kW per diode, with a case-to-heatsink resistance of 6.00 K/kW.

Diode Arrays Feature Summary

  • Single-switch topology with integrated freewheeling diode
  • AlSiC baseplate material for enhanced thermal management
  • Basic insulation using AlN substrate
  • High creepage distance of 32.2 mm

Diode Arrays Applications

  • Industrial motor drives
  • Medium-voltage power conversion systems
  • High-power renewable energy inverters

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Confirm availability status as this component may be subject to production lifecycle changes. Ensure compliance with applicable industrial safety standards before integration into final equipment designs.

Diode Arrays Selection Notes

Evaluate thermal resistance requirements against system cooling capabilities. Verify mechanical mounting torque specifications for M6 screws (4.25-5.75 Nm) and terminal connections. Consider the module's physical dimensions and weight when designing the enclosure and support structure.

Diode Arrays Part Context

This component belongs to Infineon's high-power IGBT module portfolio designed for demanding industrial applications. It utilizes advanced silicon technology optimized for high current handling and robust switching performance under extreme thermal conditions.

Diode Arrays Replacement Considerations

Consult official Infineon cross-reference guides for verified substitute part numbers. Ensure any replacement matches the original voltage, current, and thermal specifications.

DZ3600S17K3B2NOSA1DZ3600S17K3B2NOSA1
$1,064.03
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