EPC2115ENGRT

Full Half-Bridge (H Bridge) Drivers Overview

The EPC2115ENGRT is an enhancement-mode GaN FET from the EPC21xx series, packaged in a compact 3x3 mm QFN. It features a low on-resistance of 15 mΩ and a breakdown voltage of 650 V. The device integrates a monolithic gate driver for simplified control. Key electrical characteristics include a threshold voltage range of 1.5 V to 2.5 V and a maximum continuous drain current of 48 A at case temperature. The package provides excellent thermal performance with a junction-to-case thermal resistance of 1.5 °C/W.

Full Half-Bridge (H Bridge) Drivers Feature Summary

• Monolithic integration of power switch and gate driver for reduced external component count
• Enhancement-mode operation ensuring safe turn-off during fault conditions
• Compact 3x3 mm QFN package optimized for high-density power conversion designs

Full Half-Bridge (H Bridge) Drivers Applications

• High-frequency DC-DC converters
• Server and data center power supplies
• Industrial motor drives

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific suffix 'GR' indicates tape and reel packaging configuration. Confirm the exact thermal pad dimensions against your PCB layout requirements. Ensure gate drive voltage levels remain within the specified absolute maximum ratings to prevent dielectric breakdown. Check for any RoHS compliance documentation if required by your manufacturing standards.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component when high switching frequency and power density are critical. The integrated gate driver simplifies layout compared to discrete solutions. Evaluate thermal management capabilities based on the 1.5 °C/W junction-to-case resistance. Consider the 650 V rating for applications requiring significant voltage headroom in buck or boost topologies.

Full Half-Bridge (H Bridge) Drivers Part Context

This part belongs to EPC's EPC21xx family of enhanced-mode gallium nitride transistors. These devices are designed for next-generation power electronics, offering superior efficiency over traditional silicon MOSFETs. The family targets applications demanding miniaturization and high-speed switching capabilities.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

Direct pin-compatible replacements may exist within the same EPC21xx series with different Rds(on) values. Verify compatibility with existing gate drive circuits before substitution. Cross-reference with other manufacturers only after confirming interface and thermal specifications match exactly.