Single FETs, MOSFETs FDD3672-F085 product image

FDD3672-F085

  • Description:MOSFET N-CH 100V 44A TO252AA
  • Series:UltraFET™
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:6bd9801b80b4 Category: Brand:

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FDD3672-F085 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 44A TO252AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDD3672-F085

  • Description:MOSFET N-CH 100V 44A TO252AA
  • Series:UltraFET™
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:47mOhm @ 21A, 6V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1635 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):144W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for FDD3672-F085

FDD3672-F085

Single FETs, MOSFETs Overview

The FDD3672-F085 is an N-Channel UltraFET Trench MOSFET rated for 100V drain-to-source voltage and 44A continuous drain current. It features a typical on-resistance of 28mΩ at VGS=10V and ID=44A, with a maximum rating of 28mΩ. The device has a total gate charge of 36nC max at 10V and operates within a junction temperature range of -55°C to +175°C. Packaged in TO-252AA (D2PAK), it supports power dissipation up to 144W at 25°C case temperature.

Single FETs, MOSFETs Feature Summary

  • Qualified to AEC-Q101 automotive standards
  • Capable of single pulse and repetitive pulse unclamped inductive switching
  • Optimized for high-frequency efficiency with low Miller charge
  • Features low reverse recovery charge body diode

Single FETs, MOSFETs Applications

  • DC/DC converters and Off-Line UPS
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24V and 48V Systems
  • High Voltage Synchronous Rectifier

Single FETs, MOSFETs Procurement Notes

Verify the specific package marking and ordering information against the manufacturer's datasheet before procurement. Confirm that the TO-252AA package variant matches the design requirements. Ensure compliance with RoHS directives as stated in the product documentation. Check for any recent product change notices or end-of-life notifications from onsemi regarding this specific part number.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust automotive-grade reliability and high-frequency switching performance. Consider the thermal resistance characteristics when designing heat dissipation solutions. Evaluate the gate charge requirements against the driving circuit capabilities to ensure efficient switching. Verify that the voltage and current ratings exceed the system's peak operational demands.

Single FETs, MOSFETs Part Context

This device belongs to the UltraFET Trench MOSFET family from onsemi, designed for high-efficiency power management. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The FDD3672-F085 variant specifically targets automotive and industrial applications demanding high reliability and compact form factors.

Single FETs, MOSFETs Replacement Considerations

Consult official onsemi documentation for verified cross-reference part numbers. Ensure any substitute maintains equivalent electrical parameters and package dimensions. Verify that replacement components also meet AEC-Q101 qualifications if used in automotive contexts.

FDD3672-F085FDD3672-F085

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