FFSB3065B

Single Diodes Overview

The FFSB3065B is a single silicon carbide (SiC) Schottky diode from onsemi’s EliteSiC Gen1.5 series, housed in a D2PAK-2 surface-mount package. It features a 650 V repetitive reverse voltage rating and supports a continuous forward current of 30 A with a peak non-repetitive surge current of 120 A. The device exhibits a typical forward voltage of 1.7 V and a maximum reverse leakage current of 40 µA. Designed for high-temperature operation, it functions reliably up to +175°C junction temperature.

Single Diodes Feature Summary

• Utilizes silicon carbide material technology to enable superior thermal performance and high-temperature stability compared to traditional silicon devices.
• Features a zero reverse recovery charge characteristic inherent to the Schottky barrier structure, minimizing switching losses and electromagnetic interference during high-frequency operation.

Single Diodes Applications

• High-efficiency power factor correction circuits
• Uninterruptible power supply freewheeling applications
• DC-DC converter output rectification

Single Diodes Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact packaging configuration, such as reel or cut tape specifications. Ensure that the component marking and physical dimensions align with the D2PAK-2 footprint requirements for your printed circuit board design. Cross-reference the RoHS and REACH compliance status directly with the latest product documentation provided by onsemi before finalizing procurement.

Single Diodes Selection Notes

Select this component when designing systems requiring low reverse recovery charge and high thermal endurance. The D2PAK-2 package offers a balance between current handling capability and compact surface-mount integration. Consider the 650V rating for compatibility with standard bus voltages while ensuring the PCB layout accommodates the thermal dissipation needs associated with the 30A continuous current rating.

Single Diodes Part Context

This device belongs to onsemi’s EliteSiC portfolio, specifically the first generation of silicon carbide Schottky diodes. The EliteSiC line targets high-performance power conversion applications where efficiency and size reduction are critical. As a discrete component within this family, it provides a foundational building block for modern wide-bandgap semiconductor designs.

Single Diodes Replacement Considerations

Consult the official onsemi datasheet for verified cross-reference information. No alternative part numbers are confirmed in the available public documentation.