FKPF10N80

Triacs Overview

The FKPF10N80 is an N-channel enhancement mode MOSFET from onsemi's SuperFET II series, designed for high-voltage switching applications. It features a silicon technology construction housed in a TO-220FP-3 package with through-hole mounting. Key electrical parameters include a drain-source breakdown voltage (Vds) of 800 V and a continuous drain current (Id) of 10 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 1.0 Ohm at a gate-source voltage of 10 V. Additional specifications encompass a gate threshold voltage of 4.5 V, a total gate charge of 36 nC, and a power dissipation rating of 150 W. The component operates within a junction temperature range of -55°C to +150°C.

Triacs Feature Summary

• SuperFET II technology integrates logic-level gate drive with low on-resistance for efficient switching performance.
• High voltage capability supports robust operation in demanding power conversion environments.
• Through-hole packaging facilitates thermal management and mechanical stability in industrial assemblies.

Triacs Applications

• High-frequency switch-mode power supplies
• Industrial motor control systems
• Inverter circuits for renewable energy applications

Triacs Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm pin configuration and package variant. Ensure compliance with RoHS directives by checking the material composition declaration. Confirm availability status directly with authorized distributors as production lifecycles may change. Validate that the procurement channel provides genuine components with traceable origin to prevent counterfeit risks.

Triacs Selection Notes

Select this component when an 800 V rating and 10 A continuous current capacity are required for single-phase switching. Compare Rds(on) values against alternative packages to optimize conduction losses. Consider the thermal resistance characteristics of the TO-220FP-3 package for heatsink design. Evaluate gate charge requirements to ensure compatibility with available driver circuitry for optimal switching speeds.

Triacs Part Context

This part belongs to onsemi's SuperFET II family, which combines advanced trench gate technology with integrated fast recovery body diode characteristics. The series targets high-efficiency power conversion needs where reduced switching losses and improved thermal performance are critical. It serves as a discrete solution for medium-power applications requiring reliable high-voltage handling capabilities.

Triacs Replacement Considerations

Direct substitutes include FCPF10N80Z and FCPF10N80DZ, which share identical electrical specifications and pinout configurations. Verify package dimensions and thermal pad characteristics when swapping between these variants to ensure mechanical fitment and thermal interface compatibility.