FOD817A

Overview

The FOD817A is a single-channel phototransistor optocoupler featuring a gallium arsenide infrared LED and silicon phototransistor in a 4-DIP package. It provides 5000Vrms isolation voltage with a typical rise/fall time of 4µs/3µs. The device supports a maximum forward current of 50mA, collector current of 50mA, and output voltage of 70V. Current transfer ratio ranges from 80% to 160% at 5mA input. Operating temperature spans -55°C to 110°C.

Feature Summary

• Provides high-voltage electrical isolation between input and output circuits
• Integrates an infrared emitting diode with a silicon phototransistor for signal transmission
• Offers wide operating temperature range suitable for industrial environments

Applications

• General-purpose digital signal isolation
• Switching power supply feedback loops
• Microcontroller interface circuits

Procurement Notes

Verify the specific suffix 'A' against the official onsemi datasheet to confirm the exact current transfer ratio binning and performance specifications. Ensure the ordering part number matches the required package type and compliance standards before finalizing procurement orders.

Selection Notes

Select this component when standard switching speed and moderate current transfer ratio are sufficient for isolation requirements. Consider alternative series members if higher CTR or faster response times are needed for specific application constraints.

Part Context

This device belongs to the FOD817 series, which includes various variants differentiated by packaging, CTR bins, and compliance certifications. It serves as a fundamental building block for basic optoisolation tasks within broader semiconductor portfolios.

Replacement Considerations

Compatible substitutes include FOD817B, FOD817C, and FOD817D, provided they match the required CTR specifications and package dimensions for the target design.