FQD1P50TF

Single FETs, MOSFETs Overview

The FQD1P50TF is a P-Channel enhancement mode power MOSFET manufactured by onsemi, utilizing planar stripe DMOS technology. It features a -500V drain-source voltage and a continuous drain current of -1.2A at 25°C case temperature. The device exhibits a maximum static drain-source on-resistance of 10.5Ω at VGS = -10V. Key electrical parameters include a typical gate charge of 11nC and a reverse transfer capacitance of 6.0pF. It operates within a junction temperature range of -55°C to +150°C and is housed in a DPAK (TO-252-3) surface-mount package.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
• Capable of withstanding high energy pulses in avalanche and commutation modes, verified through 100% avalanche testing.
• Features improved dv/dt capability and low gate charge characteristics for efficient operation.

Single FETs, MOSFETs Applications

• Electronic lamp ballasts based on complimentary half bridge configurations
• High-side switching applications requiring robust avalanche ruggedness
• Power management circuits benefiting from fast switching speeds

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TF against official onsemi documentation to confirm packaging details such as tape and reel specifications. Ensure compatibility with the DPAK footprint during PCB layout. Confirm RoHS compliance status and REACH SVHC declarations via the manufacturer's latest datasheet or environmental information sheet before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 500V P-Channel MOSFET with moderate current handling capabilities. The low gate charge and fast switching characteristics make it suitable for high-frequency applications. Consider the thermal resistance values when designing heat dissipation strategies, particularly for continuous operation near the maximum current limits.

Single FETs, MOSFETs Part Context

This device belongs to the QFET family produced by Fairchild Semiconductor, now part of onsemi. The FQD1P50 shares technical similarities with the FQU1P50, differing primarily in the package style, with the FQD variant utilizing the DPAK form factor. This lineage emphasizes reliability and performance in power switching environments.

Single FETs, MOSFETs Replacement Considerations

The FQU1P50 is a direct functional equivalent offering identical electrical specifications but utilizes an I-PAK (TO-220AA) through-hole package instead of the DPAK surface-mount configuration. Verify pinout compatibility and thermal interface requirements when substituting between these package types.

Single FETs, MOSFETs FAQ

What is the peak diode recovery dv/dt rating for the internal body diode?

The peak diode recovery dv/dt rating is specified as -4.5 V/ns under test conditions where ISD is less than or equal to -1.5A and di/dt is less than or equal to 200A/µs.

Is the device tested for avalanche energy capability?

Yes, the datasheet confirms that the devices are 100% avalanche tested. The single pulsed avalanche energy (EAS) is rated at 110 mJ, and the repetitive avalanche energy (EAR) is 3.8 mJ.