GSFP0380

Single FETs, MOSFETs Overview

The GSFP0380 is a 30V N-Channel MOSFET manufactured by Good-Ark Semiconductor, designed for high-efficiency switch mode power supplies. It features an advanced MOSFET process technology to achieve high cell density and low on-resistance. The device offers a continuous drain current of 80A at 25°C case temperature and a maximum on-resistance of 5.5mΩ at VGS=10V. Key electrical parameters include a gate threshold voltage of 2.5V max, total gate charge of 11.1nC, and input capacitance of 1210pF. It operates within a junction temperature range of -55°C to +150°C and utilizes the PPAK5x6 surface mount package.

Single FETs, MOSFETs Feature Summary

• Advanced MOSFET process technology enabling high cell density
• Low on-resistance combined with low gate charge for efficiency
• Fast switching capabilities with reverse body recovery
• Optimized for high efficiency switched mode power supplies

Single FETs, MOSFETs Applications

• High efficiency switch mode power supplies
• DC-DC converters
• Power management circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm datasheet revision and package type (PPAK5x6) match design requirements. Ensure thermal management solutions align with the specified junction-to-case thermal resistance of 1.7°C/W. Check for RoHS compliance status in the latest documentation before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and fast switching speeds at 30V levels. Evaluate thermal performance based on the 74W power dissipation rating at 25°C case temperature. Consider the 11.1nC gate charge for driver capability requirements. Ensure the operating environment stays within the -55°C to +150°C junction temperature limits for reliable operation.

Single FETs, MOSFETs Part Context

The GSFP0380 belongs to the family of 30V N-Channel MOSFETs from Good-Ark Semiconductor. It is engineered using advanced process techniques to minimize on-resistance while maintaining high cell density. This positioning targets modern power electronics where efficiency and compact size are critical, specifically serving as a core switching element in regulated power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Ensure any replacement maintains the 30V BVDSS, 80A ID, and PPAK5x6 package compatibility. Verify that dynamic characteristics like gate charge and switching times meet original design constraints.