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H11F1SM is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists onsemi. Its product description is OPTOISO 4.17KV 1CH MOSFET 6-SMD. Review the specifications below when checking this part for your BOM.
The H11F1SM is a single-channel MOSFET output optocoupler from the H11FXM series, manufactured by onsemi. It integrates a Gallium-Aluminum-Arsenide Infrared Emitting Diode (IRED) with a symmetrical bilateral silicon Photo MOSFET. The device features a surface-mount SMD-6 Gull Wing package and supports an insulation voltage of 5300 Vrms. Key electrical parameters include a maximum forward current of 16 mA, a forward voltage of 1.75 V, a reverse voltage of 5 V, and power dissipation of 300 mW. It operates within a temperature range of -40°C to +100°C.
Verify the specific suffix against official datasheets to confirm pinout and performance characteristics. Ensure the supplier provides valid RoHS compliance documentation. Cross-reference the manufacturer part number with authorized distributor catalogs to avoid counterfeit components. Confirm that the bulk packaging matches project requirements for automated assembly processes.
Select this component when high linearity and low distortion are required for analog signal coupling. The symmetrical bilateral structure makes it suitable for AC signal applications. Consider the 5300 Vrms isolation rating for safety-critical interfaces. Evaluate the surface-mount footprint compatibility with existing PCB layouts before finalizing the design.
The H11F1SM belongs to the H11FXM series, which utilizes a Gallium-Aluminum-Arsenide IRED coupled to a silicon Photo MOSFET. This series is designed for applications demanding high reliability and precise analog signal transfer. The technology enables efficient optical coupling while maintaining electrical isolation between input and output circuits.
Check for direct substitutes within the H11FXM family or equivalent bilateral Photo MOSFET optocouplers from other manufacturers. Verify pin compatibility and isolation voltage ratings before substitution.
It uses a symmetrical bilateral silicon Photo MOSFET output.
The maximum operating temperature is +100°C.
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