HMC907APM5E

RF Amplifiers Overview

The HMC907APM5E is a GaAs MMIC pHEMT distributed power amplifier manufactured by Analog Devices Inc. It operates within a frequency range of 200 MHz to 22 GHz. The device provides 14 dB of gain and requires a supply voltage of 10 V with an operating current of 400 mA. It is housed in a 32-LFCSP-CAV (5x5) surface-mount package.

RF Amplifiers Feature Summary

• Utilizes GaAs pHEMT technology for high-performance RF amplification
• Features a self-biased design for simplified circuit integration
• Employs a distributed architecture to support ultra-wideband operation

RF Amplifiers Applications

• Wideband radar systems
• Electronic warfare applications
• Test and measurement equipment

RF Amplifiers Procurement Notes

Verify the specific suffix 'E' against official Analog Devices documentation to confirm RoHS compliance status and material composition. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity and traceability of the GaAs MMIC.

RF Amplifiers Selection Notes

Select this component when a wideband power amplifier covering frequencies up to 22 GHz is required. Consider its 14 dB gain and 10 V supply requirements during system design. Evaluate the thermal performance and package constraints associated with the 32-LFCSP-CAV form factor for the target application.

RF Amplifiers Part Context

This part belongs to the HMC series of monolithic microwave integrated circuits. It represents a specialized solution for high-frequency signal generation and processing, distinct from lower-frequency general-purpose amplifiers within the Analog Devices portfolio.

RF Amplifiers Replacement Considerations

HMC998APM5ETR