HN1D03FTE85LF

$0.24

Description：DIODE ARRAY GP 80V 100MA SC-74
Series：-

SKU:b8a7b2a12e24 Category: Diode Arrays Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

HN1D03FTE85LF is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE ARRAY GP 80V 100MA SC-74. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HN1D03FTE85LF

Description：DIODE ARRAY GP 80V 100MA SC-74
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：2 Pair CA + CC
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：80 V
Current - Average Rectified (Io) (per Diode)：100mA
Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：4 ns
Current - Reverse Leakage @ Vr：500 nA @ 80 V
Operating Temperature - Junction：125°C (Max)
Mounting Type：Surface Mount
Package / Case：SC-74, SOT-457
Supplier Device Package：SC-74
Grade：-
Qualification：-

Diode Arrays datasheet and documents for HN1D03FTE85LF

HN1D03FTE85LF

Diode Arrays Overview

The HN1D03FTE85LF is a silicon epitaxial planar diode array manufactured by Toshiba Electronic Devices & Storage Corporation. It integrates two independent dual-diode units within a single SC-74 package, featuring an anode-common configuration for Unit 1 and a cathode-common configuration for Unit 2. The device supports a maximum reverse voltage of 80 V and a peak forward current of 300 mA per diode. Key electrical characteristics include a typical reverse recovery time of 1.6 ns and low total capacitance ranging from 0.9 pF to 2.2 pF depending on the unit.

Diode Arrays Feature Summary

Integrates two distinct dual-diode configurations (anode-common and cathode-common) in a compact surface-mount package
Provides ultra-fast switching performance with a typical reverse recovery time of 1.6 ns
Features low forward voltage drop and minimal total capacitance for efficient signal handling

Diode Arrays Applications

Ultra-high speed switching circuits
High-frequency signal processing applications
Compact high-density circuit designs requiring multiple diode functions

Diode Arrays Procurement Notes

Verify that the specific ordering suffix matches the required environmental compliance standards, as temperature ratings differ between LF(T) and non-LF variants. Confirm the package marking aligns with the pin assignment diagram provided in the datasheet. Ensure design parameters remain within the absolute maximum ratings to maintain reliability under continuous heavy loads.

Diode Arrays Selection Notes

Select this component when space constraints require integrating four diodes into a single footprint. Choose Unit 1 for anode-common requirements and Unit 2 for cathode-common needs. Evaluate the thermal dissipation capabilities carefully, as the total power rating applies to the entire package rather than individual diodes.

Diode Arrays Part Context

This part belongs to Toshiba's lineup of ultra-high speed switching diodes designed for modern electronic systems. It utilizes silicon epitaxial planar technology to achieve fast response times while maintaining a small physical profile suitable for automated surface mounting processes.