HN2D02FU,LF

$0.30

Description：DIODE ARRAY GP 80V 80MA US6
Series：-

SKU:35f8cbbc56b0 Category: Diode Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

HN2D02FU,LF is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE ARRAY GP 80V 80MA US6. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HN2D02FU,LF

Description：DIODE ARRAY GP 80V 80MA US6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：3 Independent
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：80 V
Current - Average Rectified (Io) (per Diode)：80mA
Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：4 ns
Current - Reverse Leakage @ Vr：500 nA @ 80 V
Operating Temperature - Junction：125°C (Max)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：US6
Grade：-
Qualification：-

Diode Arrays datasheet and documents for HN2D02FU,LF

HN2D02FU,LF

Diode Arrays Overview

The HN2D02FU,LF is a silicon epitaxial planar diode array composed of three independent switching diodes. It features a maximum repetitive peak reverse voltage of 85 V and an average forward current rating of 80 mA per element. The device exhibits a typical forward voltage of 0.98 V at 100 mA and a fast reverse recovery time of 1.6 ns. Total capacitance is typically 0.5 pF. It operates within a junction temperature range of -55°C to 150°C and is housed in a US6 surface-mount package.

Diode Arrays Feature Summary

Composed of three independent diodes for compact circuit integration
Ultra-high speed switching capability with low reverse recovery time
Low forward voltage drop characteristics
Small total capacitance for high-frequency signal integrity

Diode Arrays Applications

High-speed switching circuits
Signal processing applications
General-purpose rectification

Diode Arrays Procurement Notes

Verify the specific ordering suffix LF(T) against the datasheet notes to confirm the correct operating temperature and storage temperature ratings. Ensure design parameters respect the absolute maximum ratings, particularly power dissipation limits when multiple diodes are active simultaneously. Confirm AEC-Q101 qualification details directly with Toshiba sales representatives as specified in the documentation.

Diode Arrays Selection Notes

Select this component for designs requiring ultra-fast switching speeds and low parasitic capacitance. Consider the thermal derating requirements if operating near the maximum junction temperature. Evaluate the package size constraints relative to the US6 footprint. Verify that the required reverse voltage does not exceed the 80 V continuous rating.

Diode Arrays Part Context

This part belongs to Toshiba's silicon epitaxial planar diode series designed for ultra-high speed switching applications. It is manufactured using advanced planar technology to ensure consistent electrical performance. The product line emphasizes miniaturization and reliability for modern electronic systems.