HN2D03F(TE85L,F)

$0.63

Description：DIODE ARRAY GP 400V 100MA SM6
Series：-

SKU:6efd986c5e74 Category: Diode Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

HN2D03F(TE85L,F) is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE ARRAY GP 400V 100MA SM6. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HN2D03F(TE85L,F)

Description：DIODE ARRAY GP 400V 100MA SM6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：3 Independent
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：400 V
Current - Average Rectified (Io) (per Diode)：100mA
Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：500 ns
Current - Reverse Leakage @ Vr：100 µA @ 400 V
Operating Temperature - Junction：150°C (Max)
Mounting Type：Surface Mount
Package / Case：SC-74, SOT-457
Supplier Device Package：SM6
Grade：-
Qualification：-

Diode Arrays datasheet and documents for HN2D03F(TE85L,F)

HN2D03F(TE85L,F)

Diode Arrays Overview

The HN2D03F is a high-speed switching diode manufactured by Toshiba Semiconductor and Storage. It features a small package with low forward voltage (VF(2) = 0.94 V typ.) and small total capacitance (CT = 2.5 pF typ.). The device has a maximum reverse voltage of 400 V, average forward current of 100 mA, and power dissipation of 300 mW. Reverse recovery time is 0.5 μs.

Diode Arrays Feature Summary

High-speed switching capability
Low forward voltage drop
Small total capacitance

Diode Arrays Applications

High-speed switching applications

Diode Arrays Procurement Notes

Verify the component against the official datasheet to ensure compatibility with your specific circuit requirements. Confirm that the operating conditions remain within the absolute maximum ratings provided in the documentation. Ensure compliance with all relevant safety standards and reliability guidelines before integration into final designs.

Diode Arrays Selection Notes

Select this component for applications requiring fast switching speeds and low capacitance. Consider the low forward voltage for efficiency. Verify thermal management needs based on the 300 mW power dissipation rating. Ensure the 400 V reverse voltage meets the circuit's peak reverse voltage requirements.

Diode Arrays Part Context

This part belongs to Toshiba's silicon epitaxial planar diode series. It is designed for general-purpose high-speed switching tasks. The component utilizes a compact package suitable for space-constrained designs. It represents a standard offering for reliable switching performance in electronic circuits.

Diode Arrays Replacement Considerations

Consult the official Toshiba Semiconductor Reliability Handbook for derating concepts. Review individual reliability data such as failure rate reports when considering substitutes. Ensure any replacement matches the electrical characteristics and package dimensions.