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HN2S02JE(TE85L,F) is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE ARRAY SCHOTT 40V 100MA ESV. Review the specifications below when checking this part for your BOM.
The Toshiba HN2S02JE(TE85L,F) is a silicon epitaxial Schottky barrier diode featuring two independent diodes in a single SOT-553-5 package. It offers a maximum reverse voltage of 45V and an average forward current of 100mA per unit, with a total rating of 150mA. The device exhibits a low forward voltage of 0.60V max at 100mA and a reverse current of 5μA max at 40V. Operating temperatures range from -40°C to +100°C, with a junction temperature limit of 125°C.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details such as reel or cut tape specifications. Ensure compliance with RoHS directives and environmental regulations relevant to your region before finalizing procurement orders.
Select this component when dual Schottky diodes are required in a minimal footprint. Consider the 45V peak reverse voltage and 100mA average forward current limits. Evaluate thermal derating requirements based on the 100mW total power dissipation rating and operating temperature range.
This part belongs to the HN2S02 series of high-speed switching Schottky barrier diodes manufactured by Toshiba Semiconductor and Storage. It utilizes silicon epitaxial technology to achieve low forward voltage and low reverse current characteristics, designed for compact electronic designs.
Consult official Toshiba substitution guides for verified equivalents. Do not assume cross-compatibility with generic Schottky diodes without verifying pinout, voltage ratings, and thermal performance against the original datasheet.
The total power dissipation rating is 100 mW.
The package has five terminals, including two anodes, two cathodes, and one no-connect terminal.
The typical forward voltage (VF) at 100mA is 0.54V.
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