HN2S03FE(TE85L,F)

Diode Arrays Overview

The Toshiba HN2S03FE is a silicon epitaxial Schottky barrier diode featuring three independent internal diodes within a single package. It provides a maximum reverse voltage of 25 V and an average forward current rating of 50 mA per diode. Key electrical characteristics include a typical forward voltage of 0.50 V at 50 mA, a maximum reverse leakage current of 0.5 μA at 20 V, and a total capacitance of 3.9 pF. The device operates with a junction temperature range up to 125 °C.

Diode Arrays Feature Summary

• Composed of three independent diodes for compact circuit integration
• Low forward voltage characteristic for efficient switching performance
• Minimal reverse leakage current ensuring low power loss in off-state
• Small total capacitance suitable for high-speed signal applications

Diode Arrays Applications

• High-speed switching circuits
• Signal rectification in consumer electronics
• Logic interface protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix TE85L,F against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when designing circuits requiring multiple Schottky diodes in a minimal footprint. Consider its 25 V reverse voltage limit and 50 mA average current capability. Evaluate thermal derating requirements if operating near the 125 °C junction temperature limit.

Diode Arrays Part Context

This part belongs to Toshiba's discrete semiconductor portfolio, specifically designed as a silicon epitaxial Schottky barrier type. It serves as a solution for applications demanding fast switching speeds and low forward voltage drops within a small surface-mount form factor.

Diode Arrays Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Cross-reference pinout configurations and absolute maximum ratings carefully to ensure functional compatibility without redesigning the host circuit board.

Diode Arrays FAQ

What is the maximum reverse voltage rating?

The maximum peak reverse voltage (V_RM) is rated at 25 V.

How many diodes are contained in this package?

The HN2S03FE contains three independent diodes sharing a common cathode structure.

What is the typical forward voltage drop?

The typical forward voltage (V_F) is 0.50 V when measured at a forward current of 50 mA.