IDT71V416VL15BEGI

Memory IC Overview

The IDT71V416VL15BEGI is a 4 Mbit (256K x 16) asynchronous static RAM fabricated using high-performance CMOS technology. It operates from a single 3.3V supply with access times of 15 ns and cycle times of 15 ns. The device features LVTTL-compatible bidirectional I/O, JEDEC center power/ground pinout for noise reduction, and upper/lower byte enable pins. It supports commercial (0°C to +70°C) and industrial (-40°C to +85°C) temperature ranges and is housed in a 48-ball BGA package.

Memory IC Feature Summary

• JEDEC center power and ground pinout configuration designed to minimize electrical noise during operation.
• LVTTL-compatible bidirectional data inputs and outputs allowing direct interface with logic families.
• Independent upper and lower byte enable pins providing granular control over data write operations.

Memory IC Applications

• High-speed cache memory systems
• Buffer memory applications
• Industrial control system storage

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm the exact speed grade, package type, and temperature range. Confirm RoHS compliance status as indicated by the 'G' suffix if applicable. Ensure the component matches the required voltage and timing specifications for the target circuit design before procurement.

Memory IC Selection Notes

Select this component when a 256K x 16 organization is required with 15 ns access speeds. Consider the 48-ball BGA package for space-constrained designs requiring surface mount technology. Verify that the operating environment falls within the specified commercial or industrial temperature limits defined by the part suffix.

Memory IC Part Context

This component belongs to the IDT71V416 family of 4 Megabit SRAMs. The 'VL' designation indicates the low-power variant available in both commercial and industrial temperature grades. The 'BEI' suffix specifies the 48-ball BGA package and industrial temperature range, distinguishing it from SOJ or TSOP variants.

Memory IC Replacement Considerations

Compatible substitutes include other 256K x 16 asynchronous SRAMs with 15 ns access times and 3.3V operation. Verify pin compatibility, specifically the JEDEC center power/ground arrangement, and ensure the replacement supports the required LVTTL input/output levels and byte enable functionality.

Memory IC FAQ

What is the function of the BHE and BLE pins?

The BHE (Byte High Enable) and BLE (Byte Low Enable) pins allow independent selection of the upper and lower bytes of the 16-bit data word for read and write operations.

How does the JEDEC center power/ground pinout benefit the design?

Placing power and ground pins in the center of the array reduces noise coupling and improves signal integrity compared to edge-placed power pins.