IDT71V546S100PF

Memory IC Overview

The IDT71V546S100PF is a 3.3V high-speed synchronous SRAM with a 4.5 Megabit capacity organized as 128K x 36 bits. It features Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles between read and write operations. The device supports a maximum clock frequency of 100 MHz with a 5 ns clock-to-data access time. It utilizes registered outputs, pipelined architecture, and individual byte write controls within a JEDEC standard 100-pin TQFP package.

Memory IC Feature Summary

• Zero Bus Turnaround eliminates dead cycles during bus turnaround between reads and writes
• Pipelined architecture with internally synchronized registered outputs for high-performance system speeds
• On-chip burst counter supporting four-word linear or interleaved burst sequences
• Single R/W control pin combined with three chip enables for simplified depth expansion

Memory IC Applications

• High-performance embedded systems requiring fast memory access
• Network infrastructure equipment utilizing parallel data interfaces
• Industrial control applications demanding reliable synchronous memory storage

Memory IC Procurement Notes

Verify the specific suffix 'PF' corresponds to the commercial temperature range and tray packaging configuration. Confirm that the component meets the required RoHS compliance status for your target market, as manufacturing specifications may vary by production date. Ensure compatibility with existing board layouts designed for the 100-pin TQFP footprint before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a 36-bit wide data interface is required for synchronous memory applications. The ZBT feature makes it suitable for designs needing efficient bus turnaround without performance penalties. Consider the 100-pin TQFP package constraints regarding board density and thermal dissipation capabilities relative to other available form factors in the product family.

Memory IC Part Context

This part belongs to the IDT71V546 series of high-speed synchronous SRAMs manufactured by Renesas Electronics Corporation. The series includes variants with different speed grades and package options, such as the S133 and S117 models. These devices are engineered to provide robust memory solutions for complex digital systems requiring high throughput and low latency.

Memory IC Replacement Considerations

IDT71V546S100PFGI8