IDW30G120C5BFKSA1

Diode Arrays Overview

The IDW30G120C5B is a 5th Generation CoolSiC™ 1200 V silicon carbide Schottky diode in a PG-TO247-3 package. It features dual anodes with a common cathode, rated for 30 A continuous forward current and 1200 V repetitive peak reverse voltage. The device exhibits zero reverse recovery charge and no forward recovery, ensuring temperature-independent switching behavior. Key electrical parameters include a maximum forward voltage of 1.65 V at 25°C and 2.30 V at 150°C, a total capacitive charge of 154 nC, and a specified dv/dt ruggedness of 150 V/ns.

Diode Arrays Feature Summary

• Eliminates reverse recovery current and forward recovery effects to enable high-frequency operation.
• Maintains low forward voltage characteristics even at elevated operating temperatures.
• Provides extended surge current capability and robust performance during transient events.
• Features tight forward voltage distribution and excellent thermal conductivity.

Diode Arrays Applications

• Solar inverters
• Uninterruptable power supplies (UPS)
• Motor drives
• Power Factor Correction (PFC)

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and marking details. Ensure that the application environment remains within the specified industrial temperature range and does not exceed the absolute maximum ratings defined in the datasheet. Confirm compliance with RoHS standards and Pb-free lead plating requirements prior to integration into the final assembly process.

Diode Arrays Selection Notes

Select this component for designs requiring high efficiency across the entire load range and reduced electromagnetic interference. The device enables smaller magnetics and heatsink requirements compared to silicon alternatives. Consider the dual-anode configuration for applications necessitating common-cathode topologies. Evaluate the thermal resistance values to ensure adequate heat dissipation for the intended duty cycle and ambient conditions.

Diode Arrays Part Context

This device belongs to Infineon's 5th Generation CoolSiC™ portfolio, designed to improve system efficiency over traditional silicon diodes. It supports higher power density solutions by allowing increased switching frequencies. The product line targets industrial power control applications where reliability and compact form factors are critical design constraints.

Diode Arrays Replacement Considerations

Consult official substitution guides for compatible devices within the same generation or voltage class. Verify pinout compatibility and thermal resistance specifications when replacing existing components in established designs.

Diode Arrays FAQ

Does the IDW30G120C5B exhibit reverse recovery charge?

No, the device is a silicon carbide Schottky diode that operates with no reverse recovery current.

What is the specified dv/dt ruggedness for this component?

The component is qualified with a specified dv/dt ruggedness of 150 V/ns.

Is this component suitable for automotive applications?

No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.