Single FETs, MOSFETs IPB065N10N3G product image

IPB065N10N3G

$2.54
  • Description:MOSFET N-CH 100V 80A D2PAK
  • Series:*
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:ec3e8cba3a0a Category: Brand:

  
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IPB065N10N3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET N-CH 100V 80A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB065N10N3G

  • Description:MOSFET N-CH 100V 80A D2PAK
  • Series:*
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):150W (Tc)
  • Operating Temperature:-55°C ~ 155°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D2PAK)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB065N10N3G

IPB065N10N3G

Single FETs, MOSFETs Overview

The UMW IPB065N10N3G is a 100 V N-Channel MOSFET in a TO-263 package. It features a continuous drain current of 80 A at 25 °C and a maximum on-resistance of 6.2 mΩ at VGS=10V. The device supports an operating temperature up to 175 °C, with a junction-to-case thermal resistance of 1 K/W. Total gate charge is typically 51 nC, and the reverse diode exhibits a forward voltage of 1.2 V max at 80 A.

Single FETs, MOSFETs Feature Summary

  • Optimized figure of merit for excellent gate charge and low on-resistance
  • Designed for high-frequency switching and synchronous rectification applications
  • Lead-free plating compliant with RoHS standards

Single FETs, MOSFETs Applications

  • High-frequency switching circuits
  • Synchronous rectification modules
  • Power management systems requiring low conduction loss

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation matches UMW or UTD Semiconductor Co., Limited rather than Infineon, despite the naming convention. Confirm the specific ordering code includes the 'G' suffix for tape and reel delivery. Ensure the component meets RoHS compliance requirements for your assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rating and 80 A continuous current capability are required. The low RDS(on) makes it suitable for efficiency-critical designs. Verify that the TO-263 footprint aligns with your PCB layout constraints and thermal management strategy.

Single FETs, MOSFETs Part Context

This part belongs to the UMW R065N10N series of N-Channel MOSFETs. It utilizes a planar trench technology to achieve low on-resistance and fast switching speeds. The device is intended for general-purpose power switching applications where thermal performance and efficiency are prioritized.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 100 V N-Channel MOSFETs in the TO-263 package. Ensure replacement parts match the 80 A current rating and 6.2 mΩ maximum on-resistance specifications. Verify pinout compatibility and thermal resistance values before implementation.

IPB065N10N3GIPB065N10N3G
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