Single FETs, MOSFETs IPTC026N12NM6ATMA1 product image

IPTC026N12NM6ATMA1

$4.81
  • Description:TRENCH >=100V
  • Series:OptiMOS™ 6
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:9955190816f5 Category: Brand:

  
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IPTC026N12NM6ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPTC026N12NM6ATMA1

  • Description:TRENCH >=100V
  • Series:OptiMOS™ 6
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):120 V
  • Current - Continuous Drain (Id) @ 25°C:26A (Ta), 222A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):8V, 10V
  • Rds On (Max) @ Id, Vgs:2.6mOhm @ 115A, 10V
  • Vgs(th) (Max) @ Id:3.6V @ 169µA
  • Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 60 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 278W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-HDSOP-16-2
  • Package / Case:16-PowerSOP Module

Single FETs, MOSFETs datasheet and documents for IPTC026N12NM6ATMA1

IPTC026N12NM6ATMA1

Single FETs, MOSFETs Overview

The IPTC026N12NM6 is an OptiMOS™ 6 power transistor featuring a 120 V drain-source breakdown voltage and a maximum on-resistance of 2.6 mΩ at VGS=10 V. It supports a continuous drain current of 222 A at TC=25 °C and a pulsed current of 888 A. The device utilizes a PG-HDSOP-16 package with top-side cooling capabilities, offering a thermal resistance from junction to case of 0.54 °C/W. Key dynamic parameters include a total gate charge of 70 nC and an output charge of 166 nC.

Single FETs, MOSFETs Feature Summary

  • Optimized for high-frequency switching applications
  • Features very low reverse recovery charge (Qrr)
  • Supports top-side cooling via the exposed tab
  • High avalanche energy rating capability

Single FETs, MOSFETs Applications

  • Industrial motor drives
  • DC-DC converters
  • Power supplies
  • Inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct component selection. Confirm that the required package variant matches the PG-HDSOP-16 specification. Check for any updated revision history or product qualification reports relevant to industrial application requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 120 V N-channel MOSFET with low conduction losses. Consider the thermal management strategy, as the device relies heavily on top-side cooling through the drain tab. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 6 family of power transistors manufactured by Infineon Technologies. It is designed for industrial applications and fully qualified according to JEDEC standards. The technology focuses on minimizing the figure of merit (FOM) through the combination of low on-resistance and low gate charge.

Single FETs, MOSFETs Replacement Considerations

Consult the official cross-reference tools provided by Infineon for verified substitutes. Do not assume pin compatibility with other packages without verifying the datasheet specifications.

IPTC026N12NM6ATMA1IPTC026N12NM6ATMA1
$4.81
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