IR21091SPBF

Gate Driver Overview

The IR21091SPBF is a half-bridge gate driver IC from Infineon Technologies, housed in an 8-SOIC package. It supports high-side and low-side driving with a maximum self-bootstrapped voltage of 600 V. The device features synchronous operation and non-inverting input logic. Peak output currents are specified at 200 mA for sinking and 350 mA for sourcing. It operates within a supply voltage range of 10 V to 20 V. Logic inputs are compatible with 3.3 V, 5 V, and 15 V levels. Typical rise and fall times are 150 ns and 50 ns, respectively. The component functions across a junction temperature range of -40°C to +150°C.

Gate Driver Feature Summary

• Supports high-side and low-side gate driving configurations up to 600 V
• Features synchronous operation with non-inverting logic inputs
• Includes undervoltage lockout protection for both drive channels

Gate Driver Applications

• IGBT gate driving
• N-channel MOSFET gate driving
• Power management circuits requiring high-voltage isolation

Gate Driver Procurement Notes

Verify the current manufacturing status of the IR21091SPBF before procurement, as it is listed as obsolete or end-of-life in multiple distributor records. Confirm availability of qualified replacement components such as the FAN7080MX-GF085 if production continuity is required. Ensure that the selected substitute matches the original specifications regarding peak output current, voltage ratings, and package dimensions to maintain circuit integrity.

Gate Driver Selection Notes

Select this component for applications requiring robust half-bridge control with high voltage tolerance. The wide operating temperature range makes it suitable for demanding environments. Consider the specific peak sourcing and sinking current requirements when designing the gate resistor network. Verify compatibility with the target logic voltage levels, as the device supports 3.3 V, 5 V, and 15 V inputs directly.

Gate Driver Part Context

The IR21091SPBF belongs to the IR2109x family of half-bridge drivers designed by Infineon Technologies. It is specifically engineered for driving IGBTs and N-channel MOSFETs in power conversion applications. The device integrates necessary protection features like undervoltage lockout. It is distinct from similar models by its specific current capabilities and non-inverting logic configuration within the standard SOIC-8 footprint.

Gate Driver Replacement Considerations

Public confirmed substitute part number: FAN7080MX-GF085 (onsemi). Verify pin-to-pin compatibility and electrical parameter alignment before substitution.