Single FETs, MOSFETs IRFP4110PBFXKMA1 product image

IRFP4110PBFXKMA1

$3.40
  • Description:TRENCH >=100V PG-TO247-3
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:c5a3d74aa753 Category: Brand:

  
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IRFP4110PBFXKMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V PG-TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFP4110PBFXKMA1

  • Description:TRENCH >=100V PG-TO247-3
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:4.5mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:210 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:9620 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):370W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247AC
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for IRFP4110PBFXKMA1

IRFP4110PBFXKMA1

Single FETs, MOSFETs Overview

The IRFP4110PBFXKMA1 is a single N-channel power MOSFET from Infineon Technologies, utilizing StrongIRFET technology. It features a maximum drain-source voltage of 100 V and a typical on-resistance of 3.7 mΩ at 25°C, with a maximum rating of 4.5 mΩ. The device supports a continuous drain current of 180 A when silicon-limited and 120 A when package-limited. It operates within a junction temperature range of -55°C to +175°C and offers high avalanche ruggedness.

Single FETs, MOSFETs Feature Summary

  • Enhanced body diode dV/dt and dI/dt capability for improved switching performance
  • Fully characterized capacitance and avalanche safe operating area (SOA)
  • Improved gate, avalanche, and dynamic dv/dt ruggedness

Single FETs, MOSFETs Applications

  • High efficiency synchronous rectification in switch-mode power supplies
  • Uninterruptible power supply systems
  • High speed power switching circuits
  • Hard switched and high frequency applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix PBFXKMA1 against official Infineon documentation to confirm exact packaging configuration and reel specifications. Ensure compliance with RoHS standards and lead-free requirements as stated in the datasheet. Confirm availability through authorized distribution channels, as stock levels may vary by region.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and robust avalanche energy handling. Evaluate thermal management needs based on the 0.4 K/W junction-to-case thermal resistance. Consider the TO-247AC package constraints for mounting torque and surface mount limitations during PCB layout design.

Single FETs, MOSFETs Part Context

This part belongs to the StrongIRFET family of power MOSFETs designed for high-efficiency power conversion. It shares core electrical characteristics with the standard IRFP4110PbF but includes specific packaging or tape-and-reel variations indicated by the suffix. The device is optimized for automotive and industrial power electronics demanding high reliability.

Single FETs, MOSFETs Replacement Considerations

The base part number IRFP4110PbF serves as the primary reference. Verify pinout compatibility and thermal resistance values before substitution. Ensure that any alternative component meets the 100 V breakdown voltage and 180 A current ratings required for the original application.

IRFP4110PBFXKMA1IRFP4110PBFXKMA1
$3.40
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