IRFR1N60ATR

$1.27

Description：MOSFET N-CH 600V 1.4A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:11f0fff4a004 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFR1N60ATR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 1.4A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR1N60ATR

Description：MOSFET N-CH 600V 1.4A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：229 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：36W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR1N60ATR

IRFR1N60ATR

Single FETs, MOSFETs Overview

The IRFR1N60ATR is a Vishay Siliconix N-Channel Power MOSFET in a DPAK (TO-252) surface-mount package. It features a 600 V drain-source voltage rating and a maximum on-state resistance of 7.0 Ω at VGS = 10 V. The device supports a continuous drain current of 1.4 A at 25 °C case temperature, with a total gate charge of 14 nC. It operates within a junction temperature range of -55 °C to +150 °C and offers a maximum power dissipation of 36 W.

Single FETs, MOSFETs Feature Summary

Low gate charge for simple drive requirements
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current

Single FETs, MOSFETs Applications

Switch mode power supply (SMPS)
Uninterruptible power supply
Power factor correction

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to confirm lead-free status and manufacturing location. Confirm that the specific revision matches the required electrical characteristics and thermal ratings. Ensure compatibility with the intended PCB footprint and soldering profile before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for low-power single-transistor flyback topologies requiring high-voltage blocking capability. Evaluate the 7.0 Ω on-resistance against efficiency targets, as it is higher than modern superjunction devices. Verify that the 1.4 A continuous current rating meets the peak load requirements under worst-case thermal conditions.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR/U series of high-voltage N-channel MOSFETs from Vishay Siliconix. It utilizes silicon technology and is designed for general-purpose switching applications. The DPAK package provides a balance between thermal performance and compact surface-mount integration for consumer and industrial electronics.