IRFR2905ZTR

Description：MOSFET N-CH 55V 42A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:698566f6effe Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFR2905ZTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR2905ZTR

Description：MOSFET N-CH 55V 42A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1380 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR2905ZTR

IRFR2905ZTR

Single FETs, MOSFETs Overview

The IRFR2905ZTR is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D-Pak (TO-252) surface-mount package and utilizes advanced silicon processing to achieve an ultra-low on-resistance of 14.5 mΩ maximum at VGS = 10V. The device supports a continuous drain current of 42A when case temperature is maintained at 25°C, with a pulsed drain current capability of 240A. It is designed for automotive applications, offering a junction-to-case thermal resistance of 1.38°C/W and allowing repetitive avalanche operation up to the maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

Advanced process technology enables extremely low on-resistance per silicon area.
Designed specifically for automotive applications with high reliability standards.
Supports fast switching speeds for efficient power conversion.
Allows repetitive avalanche operation up to the maximum junction temperature.

Single FETs, MOSFETs Applications

Automotive electronic systems
High-efficiency power switching circuits
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required tape-and-reel packaging configuration. Ensure compliance with RoHS directives and check for any end-of-life notifications or obsolescence warnings from the manufacturer before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust performance in automotive environments. The device is suitable for applications demanding low conduction losses and high pulse current handling. Consider the thermal management requirements associated with the D-Pak package and the specified junction temperature limits during system design.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It represents a generation of devices optimized for automotive markets, combining low on-resistance with high thermal stability. The product line emphasizes reliability under harsh operating conditions typical of vehicle electronics.