IRFR3708TRL

Single FETs, MOSFETs Overview

The IRFR3708TRL is a HEXFET power MOSFET manufactured by Infineon Technologies, housed in a D-Pak (TO-252) surface-mount package. It features an N-channel enhancement mode configuration with a drain-source voltage rating of 30V and a continuous drain current capacity of 61A at 25°C. The device exhibits ultra-low gate impedance and very low on-resistance, specified as 12.5mΩ maximum at VGS=10V and 14.0mΩ maximum at VGS=4.5V. Key dynamic parameters include a total gate charge of 24nC and a Miller charge of 5.8nC. It supports a single pulse avalanche energy of 213mJ and operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Ultra-low gate impedance for efficient high-frequency switching applications
• Very low RDS(on) characteristics at both 4.5V and 10V gate drive voltages
• Fully characterized avalanche voltage and current capabilities for robust operation

Single FETs, MOSFETs Applications

• High frequency DC-DC isolated converters with synchronous rectification for telecom and industrial use
• High frequency buck converters for computer processor power supplies

Single FETs, MOSFETs Procurement Notes

Verify the component status before procurement, as availability may be limited or subject to change. Confirm that the specific ordering suffix matches the required reel packaging format. Ensure compliance with RoHS directives if applicable to your manufacturing standards. Cross-reference datasheet specifications against your design requirements to confirm suitability for thermal and electrical constraints.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring fast switching speeds and low conduction losses at low gate drive voltages. The low gate charge minimizes driver power consumption, making it suitable for battery-operated or efficiency-critical systems. Evaluate the thermal resistance and safe operating area to ensure adequate heat dissipation under peak load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies, formerly International Rectifier. The HEXFET technology is known for combining low on-resistance with fast switching speeds. The IRFR3708 series is designed specifically for high-efficiency power conversion applications where size and performance are critical factors.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives with similar voltage and current ratings. Verify that any substitute maintains comparable gate charge and on-resistance values to preserve switching performance. Ensure the replacement package matches the D-Pak footprint for seamless integration into existing PCB layouts.

Single FETs, MOSFETs FAQ

What is the maximum single pulse avalanche energy for the IRFR3708?

The maximum single pulse avalanche energy is 213 mJ, starting from a junction temperature of 25°C.

How does the on-resistance vary with gate voltage?

The on-resistance is typically 8.5mΩ at VGS=10V and increases to 10.0mΩ at VGS=4.5V, allowing effective operation at lower drive voltages.